Abstract
Silicon power semiconductor device is difficult to meet the requirements of high temperature, high pressure and high frequency. Among them, the MOSFET which has the fast switch speed and the simple driving circuit, become the most popular object in SiC power electronic devices. In this paper, we choose the C2M0160120D chip of CREE company, establishing a complete model. And the static characteristics of SiC MOSFET under different temperature points are simulated. The switching characteristics of SiC MOSFET under different driving resistances are analyzed and compared with the experimental results, and the accuracy of the model is verified in this paper.
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Acknowledgements
This work was supported by the Fundamental Research Funds for the Central Universities of China (No. E16JB00160/2016JBM062/2016JBM058) and The National Key Research and Development Program of China (2016YFB1200504-C-02).
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Wang, M., Guo, Y., Wang, L., Chen, G., Qiu, R. (2018). Characterization and Variable Temperature Modeling of SiC MOSFET. In: Jia, L., Qin, Y., Suo, J., Feng, J., Diao, L., An, M. (eds) Proceedings of the 3rd International Conference on Electrical and Information Technologies for Rail Transportation (EITRT) 2017. EITRT 2017. Lecture Notes in Electrical Engineering, vol 482. Springer, Singapore. https://doi.org/10.1007/978-981-10-7986-3_28
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DOI: https://doi.org/10.1007/978-981-10-7986-3_28
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