Abstract
State-of-the-art semiconductor technologies employ thermal processing steps for various anneal, oxidation, and chemical vapor deposition (CVD) processes. Most of these fabrication processes have been dominated by hot-wall batch furnaces. Many other unit processes, however, are already performed in single-wafer processors. These include plasma etch, plasma-enhanced dielectric deposition, metal deposition, ion implantation, and microlithography. The advantages of single-wafer processing have been discussed elsewhere [1]. They have been primarily related to enhanced control of processing individual wafers, particularly as the diameter of silicon wafers has increased to 200 mm.
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Moslehi, M.M. et al. (1996). Single-Wafer Process Integration and Process Control Techniques. In: Roozeboom, F. (eds) Advances in Rapid Thermal and Integrated Processing. NATO ASI Series, vol 318. Springer, Dordrecht. https://doi.org/10.1007/978-94-015-8711-2_6
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DOI: https://doi.org/10.1007/978-94-015-8711-2_6
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