Abstract
When RTP was introduced as a promising technology step for IC fabrication, one was interested in the first place in its flexibility for the high temperature range. Meanwhile, RTP has been introduced in research for almost every temperature treatment. Whereas the high temperature range is still extremely attractive for implant activation and gate oxidation, possible applications in the silicide and metallization areas have widened the temperature range of interest down to the very limits for which radiation heating can still be envisioned, being typically 400 °C.
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Maex, K. (1996). Silicidation and Metallization Issues Using Rapid Thermal Processing. In: Roozeboom, F. (eds) Advances in Rapid Thermal and Integrated Processing. NATO ASI Series, vol 318. Springer, Dordrecht. https://doi.org/10.1007/978-94-015-8711-2_12
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DOI: https://doi.org/10.1007/978-94-015-8711-2_12
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