Abstract
Today, ULSI (ultra large scale integration) in silicon-based mass-produced integrated circuits (ICs) has its state-of-the-art representatives in microprocessors such as Intel’s Pentium or, even more powerful, the PowerPC, jointly designed by Apple, IBM and Motorola. Both products were originally designed in a 0.5 pm, 3.3 Volt CMOS (complimentary metal oxide semiconductor) technology. The Power PC contains 3.6 million transistors onto a chip, measuring 196 mm2 [1]. In the course of 1995 the line width has been further reduced to 0.35 pm for the development of processors with some 5 metal levels, such as the Pentium Pro (or P6) processor, as part of a series of continuously shrinking microelectronics, which started after the first planar single transistor in 1959 [2].
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
P.H. Singer, Semicond. Int. 17 (12), 17 (1994).
For a comprehensive review of the history of the single planar transistor to contemporary ICs, see: 40th Anniversary of the Int. Electron Devices Meeting Technical Survey, Commemorative Edition, A. Lewis (editor), IEDM, October 1994.
G.E. Moore, Int. Electron Dev. Meeting Techn. Dig., 1975, p. 11.
The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose (California), December 1994.
See for example Int. Electron Dev. Meeting Tech. Dig., 1993, in particular: Y. Taur et al., Int. Electron Dev. Meeting Tech. Dig., 1993, p. 127.
L.C. Parrillo, R.S. Payne, R.E. Davis, G.W. Reutlinger and R.L. Field, Int. Electron Dev. Meeting Techn. Dig. (1980) 752.
R. Singh, J. Appl. Phys. 63, R59 (1988).
J.M. Fairfield and G.H. Schwuttke, Solid St. Electron. 11, 1175 (1968).
B. Lojek, Mat. Res. Soc. Symp. Proc. 224, 33 (1991); see also Chapter 17 of this book.
C.M. Osburn in Rapid Thermal Processing, Science and Technology, (R.B. Fair, editor), Academic Press, New York, 1993, p. 227.
K. Maex, Chapter 12 of this book.
For a recent review see: G. Lucovsky, Y. Ma, S.V. Hattangady, D.R. Lee, Z. Lu, V. Misra, J.J. Wortman, Z. Jing, J.L. Whitten, Jpn. J. Appl. Phys. 33, 7061 (1994).
M.L. Green, Chapter 7 of this book.
A. Slaoui, L. Ventura, A. Lachiq, R. Monna and J.C. Muller, Mat. Res. Soc. Symp. Proc. 387, 365 (1995).
S.C. Sun, L.S. Wang, F.L. Yeh, Mat. Res. Soc. Symp. Proc. 387, 329 (1995).
W.B. de Boer and R.H.J. van der Linden, Mat. Res. Soc. Symp. Proc. 387, 287 (1995).
M.M. Moslehi, L. Velo, A. Paranjpe, J. Kuehne, S. Huang, R. Chapman, C. Schaper, T. Breedijk, H. Najm, D. Yin, Y.J. Lee, D. Anderson and C. Davis, Microelectr. Eng. 25, 93 (1994); see also Chapter 6 of this book.
J.-L. Regolini, J. Margail, C. Morin, P. Gouy-Pailler, Mat. Res. Soc. Symp. Proc. 342, 249 (1994).
A. Katz, A. Feingold, S.J. Pearton, S. Nakahara, M. Ellington, U.K. Chakrabarti, M. Geva and E. Lane, J. Appl. Phys. 70, 3666 (1991).
T.O. Sedgwick, P.D. Agnello, M. Berkenblit and T.S. Kuan, J. Electrochem. Soc. 138, 3042 (1991).
A. Katz, A. Feingold, S.J. Pearton, C.R. Abernathy, M. Geva and K.S. Jones, J. Vac. Sci. Technol. B9, 2466 (1991).
J.E. Fair, Solid St. Technol. 35 (8), 47 (1992).
R. Pascual, M. Sayer, C.V.R. Vasant Kumar and L. Zou, J. Appl. Phys. 70, 23 (1991).
F. Roozeboom and F.W.A. Dirne, J. Appl. Phys. 77, 5293 (1995); see also Chapter 19 of this book.
H.A. Lord, IEEE Trans. Semicond. Manufact. 1, 105 (1988).
J.M. Salzer, Solid St. Technol. 35 (5), 62 (1992)
J.M. Salzer, RTP 1995, Vol. 1: Companies, Products, Markets, Salzer Technology Enterprises, Santa Monica, 1995, USA.
Anonymous, Solid St. Technol. 38 (3), 18 (1995).
P. Burggraaf, Semicond. Int. 18 (5), 17 (1995)
C. Marsh, Solid St. Technol. 38 (9), 44 (1995).
M.J. Hart and A.G. Evans, Semicond. Sci. Technol. 3, 421 (1988).
C. Hill, in Laser and Electron Beam Solid Interactions and Materials Processing (J . F. Gibbons, L.D. Hess and T.W. Sigmon, eds.), Elsevier North-Holland, New York, 1981, pp. 361–374.
C. Hill, S. Jones and D. Boys, in Reduced Thermal Processing for ULSI (R.A. Levy, ed.), pp. 143–180, Plenum Press, New York, 1989.
F. Roozeboom in Rapid Thermal Processing, Science and Technology (R.B. Fair, editor), Academic Press, New York, 1993, pp. 349–423
and references therein, such as: F. Roozeboom and N. Parekh, J. Vac. Sc. Technol. B8, 1249 (1990).
F. Roozeboom, Mat. Res. Soc. Symp. Proc. 224, 9 (1991).
F. Roozeboom, Semicond. Int. 14 (10), 74 (1991).
F. Roozeboom, Mat. Res. Soc. Symp. Proc. 303, 149 (1993).
A.J. LaRocca in The infrared handbook (W.L. Wolfe and G.J. Zissis, eds.), revised 2nd edition, 3rd printing, Environmental Res. Inst. of Michigan, Ann Arbor, 1989, pp. 2.1–2.97.
R. Siegel and J.R. Howell, Thermal radiation heat transfer, 3rd edition, Hemisphere Publishing Corp., Washington, 1992.
T. Sato, Jpn. J. Appl. Phys. 6, 339 (1967).
W. DeHart, Microelectr. Manufact. Technol. 14 (7), 44 (1991).
J. Nulman, Soc. Photo-Opt. Instrum. Eng. Symp. Proc. 1189, 72 (1989).
J. Nulman, B. Cohen, W. Blonigan, S. Antonio, R. Meinecke and A. Gat, Mat. Res. Soc. Symp. Proc. 146, 461 (1989).
J. Nulman, S. Antonio and W. Blonigan, Appl. Phys. Left. 56, 2513 (1990).
P. Vandenabeele, K. Maex and R. de Keersmaecker, Mat. Res. Soc. Symp. Proc. 146, 149 (1989).
P. Vandenabeele and K. Maex, Soc. Photo-Opt. Instrum. Eng. Symp. Proc. 1189, 89 (1989).
J.C. Liao and T.I. Kamins, J. Appl. Phys. 67, 3848 (1990).
D.W. Pettibone, J.R. Suarez and A. Gat, Mat. Res. Soc. Symp. Proc. 52, 209 (1986).
P. Vandenabeele and K. Maex, Mat. Res. Soc. Symp. Proc. 224, 185 (1991).
R. Kakoschke, Mat. Res. Soc. Symp. Proc. 224, 159 (1991).
R. Kakoschke and E. Bussmann, Mat. Res. Soc. Symp. Proc. 146, 473 (1989).
M.M. Chen, J.B. Berkowitz-Mattuck and P.E. Glaser, Appl. Optics 2, 265 (1963).
R.E. Sheets, Nucl. Instrum. Meth. Phys. Res. B6, 219 (1985).
R.E. Sheets, Mat. Res. Soc. Symp. Proc. 52, 191 (1986).
R.E. Sheets, US Patents 4 649 261 (10 March 1987) and 4 698 486 (6 Oct. 1987).
R.E. Bedford and C.K. Ma, J. Opt. Soc. Am. 64, 339 (1974).
A. Gouffé, Revue d’optique 24, 1 (1945).
C. Lee and G. Chizinsky, Solid St. Technol. 32 (1), 43 (1989).
C. Lee, U.S. Patent 4 857 689 (15 Aug. 1989).
D.M. Camm and B. Lojek, Proc. 2nd Int. RTP Conference, RTP’94, Aug. 31-Sept. 2, 1994, Monterey, California, USA, p. 259.
G.E. Miner, C. Gronet, B. Peuse and J. Grilli, Proc. 2nd Int. RTP Conference, RTP’94, Aug. 31-Sept. 2, 1994, Monterey, California, USA, p. 94.
C.M. Gronet and G.E. Miner, European Patent 612 862 (31 Aug. 1994).
D.M. Camm, A. Kjørvel, N.P. Halpin and A.J.D. Housden, Eur. Patent 186 879 (9 July 1986); US Patent 4 700 102 (13 Oct. 1987).
J.C. Gelpey and P.O. Stump, Microelectron. Manufact. Test. 6, 22 (1983)
J.C. Gelpey and P.O. Stump, Nucl. Instrum. Meth. Phys. Res. B6, 316 (1985).
W.B. de Boer and A.E. Ozias, US Patent No. 4 821 674 (18 April 1989).
Anonymous, Solid St. Technol. 32 (11) , 55 (1989).
A. Katz and S.J. Pearton, J. Vac. Sc. Technol. B8, 1285 (1990).
S.A. Campbell, K.-H. Ahn, K.L. Knutson, B.Y.H. Liu and J.D. Leighton, IEEE Trans. Semicond. Manuf. 4, 14 (1991).
K.L. Knutson, S.A. Campbell and J.D. Leighton, Mat. Res. Soc. Symp. Proc. 224, 203 (1991).
F.P. Incropera and D.P. DeWitt, Fundamentals of heat and mass transfer, J. Wiley, New York, 1990.
J. Giling, J. Electrochem. Soc. 129, 634 (1982).
M.R. Leys, Chemtronics 2, 155 (1987).
C. van Opdorp and M.R. Leys, J. Cryst. Growth 84, 271 (1987).
P. Vandenabeele, Rapid Thermal Processing: study of temperature nonuniformity and temperature measurement, Ph.D. thesis, Catholic University of Leuven, Belgium, November 1994.
A. Atanos and P. Rushbrook, Mat. Res. Soc. Symp. Proc. 429, in press (Proc. of Symp. on Rapid Thermal and Integrated Processing V, San Francisco, April 8–12, 1996, paper N2.2).
J.K. Elliot, L.F. Derks, J. Hoog and M. Whitlock, Proc. 3rd Int. RTP Conference, RTP’95, Aug. 30-Sept. 1, 1995, Amsterdam, The Netherlands, p. 334.
J.O. Dimmock, J. Electron. Mat. 1, 255 (1972).
B. Brown, Proc. 9th European RTP Users Group Meeting, Harlow (UK), Jan. 29, 1992.
J.C. Chang, T. Nguyen, J.S. Nakos and J.W. Korejwa, Soc. Photo-Opt. Instrum. Eng. Symp. Proc. 1595, 35 (1991).
A.J. LaRocca in The infrared handbook (W.L. Wolfe and G.J. Zissis, eds.), revised 2nd edition, 3rd printing, Environmental Res. Inst. of Michigan, Ann Arbor, 1989, pp. 5.92–5.95.
F. Wong, C.Y. Chen and Y.-H. Ku, Mat. Res. Soc. Symp. Proc. 146, 27 (1989).
L.R. Wollmann, Electro-opt. Syst. Des. 11 (9), 37 (1979).
J.-L. Regolini, D. Dutartre, D. Bensahel and J. Penelon, Solid St. Technol. 34 (2), 47 (1991).
S.R. Wilson, R.B. Gregory and W.M. Paulson, Mat. Res. Soc. Symp. Proc. 52, 181 (1986).
F. Roozeboom and N. Parekh, J. Vac. Sc. Technol. B8, 1249 (1990).
D.P. DeWitt and R.E. Rondeau, J. Thermophysics 3, 153 (1989).
J.C. Sturm and A. Reddy, Mat. Res. Soc. Symp. Proc. 387, 137 (1995).
F.G. Böbel, H. Möller, W. Preiss, Proc. IEEE/SEMI Advanced Semiconductor Manufacturing Conf., Oct. 19–20, 1993, Boston, p. 130.
F.G. Böbel, H. Möller, B. Hertel, G. Ritter and P. Chow, Solid St. Technol. 37(8), 55 (1994).
H. Möller, F.G. Böbel, B. Hertel, T. Lindenberg and G. Ritter, J. Cryst. Growth 157, 327 (1995).
Y.J. Lee, C.H. Chou, B.T. Khuri-Yakub and K.C. Saraswat, Soc. Photo-Opt. Instrum. Eng. Symp. Proc. 1393, 366 (1990).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1996 Springer Science+Business Media Dordrecht
About this chapter
Cite this chapter
Roozeboom, F. (1996). Introduction: History and Perspectives of Rapid Thermal Processing. In: Roozeboom, F. (eds) Advances in Rapid Thermal and Integrated Processing. NATO ASI Series, vol 318. Springer, Dordrecht. https://doi.org/10.1007/978-94-015-8711-2_1
Download citation
DOI: https://doi.org/10.1007/978-94-015-8711-2_1
Publisher Name: Springer, Dordrecht
Print ISBN: 978-90-481-4696-3
Online ISBN: 978-94-015-8711-2
eBook Packages: Springer Book Archive