Abstract
Low Pressure Plasma (LPP) processes are non-equilibrium surface modification techniques that allow the modification of solid substrates by means of:
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a-
the deposition of void-free, well adherent thin films (100 – 10,000 Å) of chemical composition and properties tuneable in continuo with the plasma parameters (Plasma Enhanced — Chemical Vapour Deposition, PE-CVD);
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b-
the modification of the very first surface layers of solid materials by grafting chemical functionalities (Plasma Treatments, PT);
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c-
the ablation of materials through reactions with active species generated in the plasma to form volatile products (Plasma Etching).
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d’Agostino, R. (1997). Plasma-Surface Interactions. In: Williams, P.F. (eds) Plasma Processing of Semiconductors. NATO ASI Series, vol 336. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5884-8_13
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DOI: https://doi.org/10.1007/978-94-011-5884-8_13
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