Plasma Processing of Semiconductors

  • P. F. Williams

Part of the NATO ASI Series book series (NSSE, volume 336)

Table of contents

  1. Front Matter
    Pages i-x
  2. Plasma Etching

  3. Plasma Deposition

    1. T. S. Cale, G. B. Raupp, B. R. Rogers, F. R. Myers, T. E. Zirkle
      Pages 89-108
    2. T. S. Cale, V. Mahadev, Z. Tang, G. Rajagopalan, L. J. Borucki
      Pages 109-124
    3. J. Perrin
      Pages 125-136
  4. Plasma Sources

    1. T. D. Mantei
      Pages 137-156
    2. R. W. Boswell, A. Ellingboe, A. Degeling, M. Lieberman, J. Derouard
      Pages 181-186
    3. J. Margot, M. Moisan
      Pages 187-210
  5. Plasma-Surface Interactions

  6. Numerical Modeling

  7. Plasma Diagnostics

    1. P. F. Williams
      Pages 321-338
    2. Nader Sadeghi, Jacques Derouard, Jean-Paul Booth
      Pages 339-358

About this book

Introduction

Plasma Processing of Semiconductors contains 28 contributions from 18 experts and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, less conventional processing applications of plasmas, and industrial applications.
Audience: Coverage ranges from introductory to state of the art, thus the book is suitable for graduate-level students seeking an introduction to the field as well as established workers wishing to broaden or update their knowledge.

Keywords

Plasma collision dusty plasma integrated circuit optics photoelektrochemische Zelle plasma etching plasma processing

Editors and affiliations

  • P. F. Williams
    • 1
  1. 1.Department of Electrical EngineeringUniversity of Nebraska-LincolnLincolnUSA

Bibliographic information

  • DOI https://doi.org/10.1007/978-94-011-5884-8
  • Copyright Information Kluwer Academic Publishers 1997
  • Publisher Name Springer, Dordrecht
  • eBook Packages Springer Book Archive
  • Print ISBN 978-94-010-6486-6
  • Online ISBN 978-94-011-5884-8
  • Series Print ISSN 0168-132X
  • About this book
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