Abstract
As a first assessment for the fabrication of Geiger mode avalanche photodiode arrays, the individual pixels are made. Geiger mode avalanche photodiodes are very sensitive for defects, because these cause dark counts and afterpulsing. To investigate the influence of the processing on these effects, different fabrication methods are used to create experimental devices. The lowest dark count rates and afterpulsing probabilities are obtained for devices with cathodes formed using a polysilicium cathode process. This is due to the gettering of impurities from the junction area by the polysilicon layer.
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© 1998 Springer Science+Business Media Dordrecht
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Kindt, W.J., van Zeijl, H.W. (1998). Fabrication Technology of Geiger Mode Avalanche Photodiodes. In: van den Berg, A., Bergveld, P. (eds) Sensor Technology in the Netherlands: State of the Art. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-5010-1_22
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DOI: https://doi.org/10.1007/978-94-011-5010-1_22
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-6103-2
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