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SOI Devices and Circuits: An Overview of Potentials and Problems

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Physical and Technical Problems of SOI Structures and Devices

Part of the book series: NATO ASI Series ((ASHT,volume 4))

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Abstract

Silicon-on-Insulator (SOI) technology has evolved from a mere laboratory curiosity in the early ’80s to a technology in which large circuits such as 1 Mbit SRAMs can be made. The flexibility provided by full dielectric isolation and the quasi-ideal properties of the SOI MOSFET (sharp subthreshold slope, low body-effect coefficient,...) have given rise to new fields of applications for SOI devices. Beside high-temperature and radiation hard niche applications, SOI technology is now increasingly used for the fabrication of low-voltage, low-power CMOS circuits, high-frequency (microwave) devices, and high-temperature circuits. Some problems related to the physics of SOI and to SOI circuits still continue to raise questions about the future of SOI technology. These issues will be addressed in this paper.

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Authors and Affiliations

  1. Microelectronics Laboratory (DICE), Université Catholique de Louvain (UCL), Bâtiment Maxwell, Place du Levant 3, B-1348, Louvain-la-Neuve, Belgium

    Jean-Pierre Colinge

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  1. Maxwell-DICE, Université Catholique de Louvain, Place du Levant 3, 1348, Louvain-la-Neuve, Belgium

    J. P. Colinge

  2. Institute of Semiconductor Physics, Ukrainian Academy of Sciences, Pr. Nauki 45, 252028, Kiev, Ukraine

    A. N. Nazarov

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Colinge, JP. (1995). SOI Devices and Circuits: An Overview of Potentials and Problems. In: Colinge, J.P., Lysenko, V.S., Nazarov, A.N. (eds) Physical and Technical Problems of SOI Structures and Devices. NATO ASI Series, vol 4. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0109-7_23

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  • DOI: https://doi.org/10.1007/978-94-011-0109-7_23

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