Abstract
This paper discusses the different noise sources in thick-and thin-film depletion mode SOI p-MOSFETs. As is shown, for front-or back-channel operation, the low-frequency noise spectrum is predominantly l/f-like. This noise is usually attributed to carrier interactions with the near-interface oxide traps. For a buried-channel mode of operation, additional generation-recombination (GR) noise is observed. Detailed analysis reveals that the GR noise amplitude and time constant are a strong function of either the front-or the back-gate bias. A model will be proposed which enables in principle the extraction of the underlying density of interface traps.
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© 1995 Springer Science+Business Media Dordrecht
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Lukyanchikova, N.B., Petrichuk, M.V., Garbar, N.P., Simoen, E., Claeys, C. (1995). Low-Frequency Noise Characterisation of Silicon-On-Insulator Depletion-Mode p-MOSFETS. In: Colinge, J.P., Lysenko, V.S., Nazarov, A.N. (eds) Physical and Technical Problems of SOI Structures and Devices. NATO ASI Series, vol 4. Springer, Dordrecht. https://doi.org/10.1007/978-94-011-0109-7_22
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DOI: https://doi.org/10.1007/978-94-011-0109-7_22
Publisher Name: Springer, Dordrecht
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