Abstract
The central aspect of an abrupt heterojunction, and the point of departure for all its device properties, is the exact lineup of the bands of the two semiconductors at the interface. Band lineups vary over a wide range. Lineup data from numerous heterosystems have been reported in the literature, but only a few can be considered truly reliable. Of several theories that have been proposed to explain and/or predict band lineups, the Harrison Atomic Orbital (HAO) Theory has been by far the most successful; it agrees with those experimental data that are considered most trustworthy to within ±0.13 eV (standard deviation). Also reviewed are the Frensley-Kroemer Pseudopotential (FKP) theory, the Electron Affinity Rule (EAR), and Self-Consistent Interface Potential (SCIP) calculations of band lineups.
Although heterojunctions between two III/V semiconductors grown by high-performance technologies appear to be well-understood, the origins of observed technology-dependent variations remain obscure. Heterojunctions involving different columns in the periodic table on the two sides are prone to various severe technology-sensitive complications that lie outside existing theories.
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References
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© 1985 Martinus Nijhoff Publishers, Dordrecht
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Kroemer, H. (1985). Theory of Heterojunctions: A Critical Review. In: Chang, L.L., Ploog, K. (eds) Molecular Beam Epitaxy and Heterostructures. NATO ASI Series, vol 87. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-5073-3_10
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DOI: https://doi.org/10.1007/978-94-009-5073-3_10
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