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Mobile Phone Transmitters for Wireless Standards: Systems, Architectures and Technologies

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Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets

Part of the book series: Analog Circuits and Signal Processing ((ACSP))

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Abstract

This chapter aims to paint a broad picture of the technological limitations that power amplifiers for wireless handsets must cope with. In order to maximize spectral efficiency and immunity to fading/interferers/noise, modern RF standards generally use techniques such as Spread spectrum or Orthogonal-Frequency-Duplex methods. Their drawback is increased dynamic envelope variations. To preserve linearity, power amplifiers are sometimes forced to operate in a backed-off regime whereby their efficiency is reduced. The most commonly used efficiency-enhancement architectures are reviewed here while their respective advantages/drawbacks are assessed from the standpoint of complexity, bill-of-material, die area and compliance with integration on silicon. At last, the capabilities of the power devices that are available in a 0.25 μm BICMOS SiGe technology (ST Microelectronics) are discussed comparatively to III/V processes in terms of power gain, linearity, and robustness to thermal runaway and/or output load mismatch.

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  1. IMS Laboratory, 33405, Talence, France

    Laurent Leyssenne, Eric Kerhervé & Yann Deval

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Leyssenne, L., Kerhervé, E., Deval, Y. (2011). Mobile Phone Transmitters for Wireless Standards: Systems, Architectures and Technologies. In: Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets. Analog Circuits and Signal Processing. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-0425-1_1

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