Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets

  • Laurent Leyssenne
  • Eric Kerhervé
  • Yann Deval

Part of the Analog Circuits and Signal Processing book series (ACSP)

Table of contents

  1. Front Matter
    Pages i-xvi
  2. Laurent Leyssenne, Eric Kerhervé, Yann Deval
    Pages 49-100
  3. Laurent Leyssenne, Eric Kerhervé, Yann Deval
    Pages 101-150
  4. Back Matter
    Pages 151-166

About this book

Introduction

Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets is intended to designers and researchers who have to tackle the efficiency/linearity trade-off in modern RF transmitters so as to extend their battery lifetime. High data rate 3G/4G standards feature broad channel bandwidths, high dynamic range and critical envelope variations which generally forces the power amplifier (PA) to operate in a low efficiency “backed-off” regime. Classic efficiency enhancement techniques such as Envelope Elimination and Restoration reveal to be little compliant with handset-dedicated PA implementation due to their channel-bandwidth-limited behavior and their increased die area consumption and/or bill-of-material. The architectural advances that are proposed in this book circumvent these issues since they put the stress on low die-area /low power-consumption control circuitry. The advantages of silicon over III/V technologies are highlighted by several analogue signal processing techniques that can be implemented on-chip with a power amplifier. System-level and transistor-level simulations are combined to illustrate the principles of the proposed power adaptive solutions. Measurement on BICMOS demonstrators allows validating the functionality of dynamic linearity/efficiency management. In Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets, PA designers will find a review of technologies, architectures and theoretical formalisms (Volterra series…) that are traditionally related to PA design. Specific issues that one encounters in power amplifiers (such as thermal / memory effects, stability, VSWR sensitivity…) and the way of overcoming them are also extensively considered throughout this book.

Keywords

3G/4G wireless standards 4G wireless standards Efficiency enhancement techniques Memory effects' analysis RF Power Amplifiers SiGe BiCMOS integrated circuit technology System-level non-linearity analysis

Authors and affiliations

  • Laurent Leyssenne
    • 1
  • Eric Kerhervé
    • 2
  • Yann Deval
    • 3
  1. 1., Circuit design/reliability group (COFI)IMS LaboratoryTalence CedexFrance
  2. 2., Circuit design/reliability group (COFI)IMS LaboratoryTalence CedexFrance
  3. 3., Circuit design/reliability group (COFI)IMS LaboratoryTalenceFrance

Bibliographic information

  • DOI https://doi.org/10.1007/978-94-007-0425-1
  • Copyright Information Springer Science+Business Media B.V. 2011
  • Publisher Name Springer, Dordrecht
  • eBook Packages Engineering
  • Print ISBN 978-94-007-0424-4
  • Online ISBN 978-94-007-0425-1
  • About this book
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