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Vertically Integrated MEMS SOI Composite Porous Silicon-Crystalline Silicon Cantilever-Array Sensors: Concept for Continuous Sensing of Explosives and Warfare Agents

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Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators

Abstract

This study focuses on arrays of cantilevers made of crystalline silicon (c-Si), using SOI wafers as the starting material and using bulk micromachining. The arrays are subsequently transformed into composite porous silicon-crystalline silicon cantilevers, using a unique vapor phase process tailored for providing a thin surface layer of porous silicon on one side only. This results in asymmetric cantilever arrays, with one side providing nano-structured porous large surface, which can be further coated with polymers, thus providing additional sensing capabilities and enhanced sensing. The c-Si cantilevers are vertically integrated with a bottom silicon die with electrodes allowing electrostatic actuation. Flip Chip bonding is used for the vertical integration. The readout is provided by a sensitive Capacitance to Digital Converter. The fabrication, processing and characterization results are reported. The reported study is aimed towards achieving miniature cantilever chips with integrated readout for sensing explosives and chemical warfare agents in the field.

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Acknowledgments

The contributions of Kamea Program of Israeli Ministry of Absorption and Center for Security Science and Technology, Department of Chemical Engineering, Technion – Israel Institute of Technology, are gratefully acknowledged.

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Correspondence to Yael Nemirovsky .

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Stolyarova, S. et al. (2010). Vertically Integrated MEMS SOI Composite Porous Silicon-Crystalline Silicon Cantilever-Array Sensors: Concept for Continuous Sensing of Explosives and Warfare Agents. In: Gusev, E., Garfunkel, E., Dideikin, A. (eds) Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators. NATO Science for Peace and Security Series B: Physics and Biophysics. Springer, Dordrecht. https://doi.org/10.1007/978-90-481-3807-4_21

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  • DOI: https://doi.org/10.1007/978-90-481-3807-4_21

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  • Online ISBN: 978-90-481-3807-4

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