Abstract
Modeling of a carbon nanotube interconnect is primarily dependent on its diameter, electron transport properties, chiralities, metallic and semiconducting properties. This chapter presents a technical review of analytical models for single-walled (SWNT), double-walled (DWNT), and multi-walled CNT (MWNT) structures. Depending on the geometry, the equivalent electrical models and the associated resistive, inductive, and capacitive parasitics for different SWNT, DWNT, and MWNT bundles are described.
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Kaushik, B.K., Majumder, M.K. (2015). Modeling of Carbon Nanotube Interconnects. In: Carbon Nanotube Based VLSI Interconnects. SpringerBriefs in Applied Sciences and Technology. Springer, New Delhi. https://doi.org/10.1007/978-81-322-2047-3_3
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DOI: https://doi.org/10.1007/978-81-322-2047-3_3
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Publisher Name: Springer, New Delhi
Print ISBN: 978-81-322-2046-6
Online ISBN: 978-81-322-2047-3
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