Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells
An approach to increase the capabilities of integrated circuit nonvolatile memory is to take advantage of the hysteresis in the polarization of ferroelectric materials. For a rigorous analysis of this and similar devices a suitable model for the ferroelectric effects has been developed. We describe this model and show the results of its implementation into a device simulator.
KeywordsGate Voltage Field Effect Transistor Ferroelectric Material Hysteresis Curve Locus Curve
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- B. Jiang, P. Zurcher, R. Jones, S. Gillespie, and J. Lee, “Computationally Efficient Ferroelectric Capacitor Model for Circuit Simulation,” in IEEE Symposium on VLSI Technology Digest of Technical Papers, pp. 141–142, 1997.Google Scholar