Abstract
An approach to increase the capabilities of integrated circuit nonvolatile memory is to take advantage of the hysteresis in the polarization of ferroelectric materials. For a rigorous analysis of this and similar devices a suitable model for the ferroelectric effects has been developed. We describe this model and show the results of its implementation into a device simulator.
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© 1998 Springer-Verlag/Wien
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Dragosits, K., Knaipp, M., Selberherr, S. (1998). Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_91
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_91
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7415-9
Online ISBN: 978-3-7091-6827-1
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