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Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells

  • K. Dragosits
  • M. Knaipp
  • S. Selberherr
Conference paper

Abstract

An approach to increase the capabilities of integrated circuit nonvolatile memory is to take advantage of the hysteresis in the polarization of ferroelectric materials. For a rigorous analysis of this and similar devices a suitable model for the ferroelectric effects has been developed. We describe this model and show the results of its implementation into a device simulator.

Keywords

Gate Voltage Field Effect Transistor Ferroelectric Material Hysteresis Curve Locus Curve 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • K. Dragosits
    • 1
  • M. Knaipp
    • 1
  • S. Selberherr
    • 1
  1. 1.Institute for MicroelectronicsTU ViennaViennaAustria

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