Abstract
It is argued that the modeling of electromigration at the microscopic level results into systems of equations which can be very well addressed by state-of-the-art TCAD methods.
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Schoenmaker, W., Petrescu, V. (1998). The Modeling of Electromigration A New Challenge for TCAD?. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_82
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_82
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