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A Physically-Based Electron Mobility Model for Silicon Device Simulation

  • G. Kaiblinger-Grujin
  • T. Grasser
  • S. Selberherr
Conference paper

Abstract

We present an analytical low-field electron mobility formula for silicon which treats the dependence on all common dopants, such as P, As, Sb, and B in a unified manner. The expressions are derived from Monte-Carlo (MC) calculations which are based on a theoretical approach to ionized impurity scattering that inherently distinguishes the dopant species. From these first principle data we derive analytical expressions for the majority and minority mobility valid in the temperature range (70–500 K) and up to an impurity concentration of 1022 cm-3. The agreement with experimental data is excellent. Not only the lower majority electron mobility in As- and Sb-doped Si, but also the higher minority electron mobility in B-doped Si compared to the majority mobility is confirmed. Hence, this universally usable mobility model is very well suited for device simulation purposes.

Keywords

Electron Mobility Mobility Model Ionize Impurity Scattering Dopant Species Principle Data 
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References

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    G. Masetti, M. Severi, and S. Solmi, “Modeling of Carrier Mobility Against Carrire Concentration in Arsenic-, Phosporus- and Boron-Doped Silicon,” IEEE Trans. Electron Devices, vol. ED-30, no. 7, pp. 764–769, 1983.CrossRefGoogle Scholar
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    S. Swirhum, D. Kane, and R. Swanson, “Temperature Dependence of Minority Electron Mobilityand Band-Gap Narrowing in p+ Si,” in Int. Electron Devices Meeting, pp. 298–301, 1988Google Scholar
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    G. Kaiblinger-Grujin, H. Kosina, and S. Selberherr, “Influence of the Doping Element on the Electron Mobility in n-Silicon,” J. Appl. Phys., vol. 83, no. 6 pp. 3096–3101, 1988CrossRefGoogle Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • G. Kaiblinger-Grujin
    • 1
  • T. Grasser
    • 1
  • S. Selberherr
    • 1
  1. 1.Institute for MicroelectronicsTU ViennaViennaAustria

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