Abstract
The influence of the trench design on the static and dynamic behavior of high voltage non-punch-through-IGBTs is numerically examined using the program „MEDICI“. Moreover an analytical model is presented describing the dependence of the carrier distribution in the trench corridor of the NPT-trench IGBT.
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References
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© 1998 Springer-Verlag/Wien
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Kartal, V., Gerlach, W. (1998). Investigation of Non-Punch-Through IGBTs with different trench designs. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_75
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_75
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7415-9
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