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Investigation of Non-Punch-Through IGBTs with different trench designs

  • V. Kartal
  • W. Gerlach
Conference paper

Abstract

The influence of the trench design on the static and dynamic behavior of high voltage non-punch-through-IGBTs is numerically examined using the program „MEDICI“. Moreover an analytical model is presented describing the dependence of the carrier distribution in the trench corridor of the NPT-trench IGBT.

Keywords

Voltage Drop Space Charge Region Carrier Distribution Electron Current Density Hole Current 
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References

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    Kitagawa, M. Omura, I. Hasegawa, S. Tomoki, I. Nakagawa, A. IEDMWashington, Dezember 5–8, 1993.Google Scholar
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    Amaratunga, A.J. Udrea, F. IEEE Transactions on Electron Devices, Juli 1995. Vol. 42, Nr.7.Google Scholar
  3. [3]
    Omura, I. Ogura, T. Sugiyama, K. Ohashi, H. ISPSDWeimar, May 26–29, 1997.Google Scholar
  4. [4]
    Schönauer, T. Kartal, V. Gerlach, W. ISPS’96 3 rd. Prag, September 11–13, 1996Google Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • V. Kartal
    • 1
  • W. Gerlach
    • 1
  1. 1.Institute of Microelectronics and Solid State ElectronicsTU BerlinBerlinGermany

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