Investigation of Non-Punch-Through IGBTs with different trench designs

  • V. Kartal
  • W. Gerlach
Conference paper


The influence of the trench design on the static and dynamic behavior of high voltage non-punch-through-IGBTs is numerically examined using the program „MEDICI“. Moreover an analytical model is presented describing the dependence of the carrier distribution in the trench corridor of the NPT-trench IGBT.


Voltage Drop Space Charge Region Carrier Distribution Electron Current Density Hole Current 
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Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • V. Kartal
    • 1
  • W. Gerlach
    • 1
  1. 1.Institute of Microelectronics and Solid State ElectronicsTU BerlinBerlinGermany

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