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A new compact model for the analysis of the anomalies in I-V characteristics of Schottky diodes

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Simulation of Semiconductor Processes and Devices 1998

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Abstract

A new enhanced analytical model including quantum-mechanical effects which reflects the internal behaviour of Schottky structures more adequately and corresponds to experimental characteristics is presented. The contribution of surface generation — recombination current to the total current through the interface is significant, particularly for low forward applied voltages and low temperatures and cannot be neglected in the model for parameters extraction.

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Author information

Authors and Affiliations

  1. Department of Microelectronics, Slovak Technical University in Bratislava, Ilkovicova 3, SK-812, 19 Bratislava, Slovakia

    J. Racko, D. Donoval & V. Drobny

Authors
  1. J. Racko
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  2. D. Donoval
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  3. V. Drobny
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Editor information

Editors and Affiliations

  1. IMEC vzw, Leuven, Belgium

    Kristin De Meyer  & Serge Biesemans  & 

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© 1998 Springer-Verlag/Wien

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Racko, J., Donoval, D., Drobny, V. (1998). A new compact model for the analysis of the anomalies in I-V characteristics of Schottky diodes. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_74

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  • DOI: https://doi.org/10.1007/978-3-7091-6827-1_74

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7415-9

  • Online ISBN: 978-3-7091-6827-1

  • eBook Packages: Springer Book Archive

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