A new compact model for the analysis of the anomalies in I-V characteristics of Schottky diodes

  • J. Racko
  • D. Donoval
  • V. Drobny
Conference paper


A new enhanced analytical model including quantum-mechanical effects which reflects the internal behaviour of Schottky structures more adequately and corresponds to experimental characteristics is presented. The contribution of surface generation — recombination current to the total current through the interface is significant, particularly for low forward applied voltages and low temperatures and cannot be neglected in the model for parameters extraction.


Total Current Schottky Diode Parameter Extraction Compact Model Surface Recombination Velocity 
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Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • J. Racko
    • 1
  • D. Donoval
    • 1
  • V. Drobny
    • 1
  1. 1.Department of MicroelectronicsSlovak Technical University in Bratislava19 BratislavaSlovakia

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