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Efficient Modeling of Spatially Varying Degeneracy in Monte Carlo Particle Simulation of Highly Doped Submicron HEMT

  • M. Isler
  • D. Liebig
  • K. Schünemann
Conference paper

Abstract

An efficient technique has been developed and applied to incorporate the spatially dependent influence of the Pauli exclusion principle in modeling the scattering processes in a two-dimensional Monte Carlo Device Simulator. The degeneracy effects on the performance of highly doped InP-based High Electron Mobility Transistors are investigated. It is found that degeneracy significantly affects the behavior of carriers not only in the channel but also in the contact regions what strongly influences device characteristics like I-V curves and transconductance.

Keywords

Drift Velocity Energy Distribution Function Pauli Principle High Electron Mobility Transistor Pauli Exclusion Principle 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    P. Lugli, D. K. Ferry, “Degeneracy in the Ensemble Monte Carlo Method for High-Field Transport in Semiconductors,” IEEE Transactions on Electron Devices, vol. 32, pp. 2431–2437, 1985CrossRefGoogle Scholar
  2. [2]
    Y. Yamada, “Modelling Degeneracy for Monte-Carlo Simulation of Electron Transport in GaAs,” Electronics Letters. vol. 27, pp. 679–680, 1991CrossRefGoogle Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • M. Isler
  • D. Liebig
    • 1
  • K. Schünemann
    • 1
  1. 1.Arbeitsbereich HochfrequenztechnikTech. Univ. Hamburg-HarburgHamburgGermany

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