Abstract
An efficient technique has been developed and applied to incorporate the spatially dependent influence of the Pauli exclusion principle in modeling the scattering processes in a two-dimensional Monte Carlo Device Simulator. The degeneracy effects on the performance of highly doped InP-based High Electron Mobility Transistors are investigated. It is found that degeneracy significantly affects the behavior of carriers not only in the channel but also in the contact regions what strongly influences device characteristics like I-V curves and transconductance.
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References
P. Lugli, D. K. Ferry, “Degeneracy in the Ensemble Monte Carlo Method for High-Field Transport in Semiconductors,” IEEE Transactions on Electron Devices, vol. 32, pp. 2431–2437, 1985
Y. Yamada, “Modelling Degeneracy for Monte-Carlo Simulation of Electron Transport in GaAs,” Electronics Letters. vol. 27, pp. 679–680, 1991
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© 1998 Springer-Verlag/Wien
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Isler, M., Liebig, D., Schünemann, K. (1998). Efficient Modeling of Spatially Varying Degeneracy in Monte Carlo Particle Simulation of Highly Doped Submicron HEMT. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_43
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_43
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7415-9
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