Efficient Modeling of Spatially Varying Degeneracy in Monte Carlo Particle Simulation of Highly Doped Submicron HEMT
An efficient technique has been developed and applied to incorporate the spatially dependent influence of the Pauli exclusion principle in modeling the scattering processes in a two-dimensional Monte Carlo Device Simulator. The degeneracy effects on the performance of highly doped InP-based High Electron Mobility Transistors are investigated. It is found that degeneracy significantly affects the behavior of carriers not only in the channel but also in the contact regions what strongly influences device characteristics like I-V curves and transconductance.
KeywordsDrift Velocity Energy Distribution Function Pauli Principle High Electron Mobility Transistor Pauli Exclusion Principle
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