Effects of scaling and lattice heating on n-MOSFET performance via electrothermal Monte Carlo simulation

  • P. D. Yoder
  • W. Fichtner
Conference paper


The technological advances which have enabled fabrication of devices ever deeper into the submicron regime have left many new and unexplored theoretical questions in their wake. In this study, we investigate the effect of self-heating on charge transport and oxide degradation in n-channel MOSFETs as a function of channel length and applied bias via the Monte Carlo and hydrodynamic methods. We demonstrate the increasing importance of self-heating with decreasing device dimension, and show that even moderate lattice heating can significantly suppress the high energy tail of the electron distribution function as well as influence the oxide degradation rate under normal device operation.


Lattice Temperature Electron Distribution Function Gate Current High Energy Tail Eyring Model 
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Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • P. D. Yoder
    • 1
  • W. Fichtner
    • 1
  1. 1.ETH ZürichInstitut für Integrierte SystemeZürichSwitzerland

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