Abstract
The technological advances which have enabled fabrication of devices ever deeper into the submicron regime have left many new and unexplored theoretical questions in their wake. In this study, we investigate the effect of self-heating on charge transport and oxide degradation in n-channel MOSFETs as a function of channel length and applied bias via the Monte Carlo and hydrodynamic methods. We demonstrate the increasing importance of self-heating with decreasing device dimension, and show that even moderate lattice heating can significantly suppress the high energy tail of the electron distribution function as well as influence the oxide degradation rate under normal device operation.
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Yoder, P.D., Fichtner, W. (1998). Effects of scaling and lattice heating on n-MOSFET performance via electrothermal Monte Carlo simulation. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_42
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_42
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7415-9
Online ISBN: 978-3-7091-6827-1
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