The Role of Quantization Effects in Inversion Hole Layers of Tunnel MOS Structures on n-Si Substrates
Disregarding the quantum effects in inversion hole layers was shown to result in the false calculation of the distribution of the applied voltage in a tunnel MOS structure which consequently provokes substantial errors in estimating the tunnel currents and the energy of injected electrons.
KeywordsInversion Layer Tunnel Current Gate Oxide Band Profile Base Voltage
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