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The Role of Quantization Effects in Inversion Hole Layers of Tunnel MOS Structures on n-Si Substrates

  • A. F. Shulekin
  • M. I. Vexler
  • H. Zimmermann
Conference paper

Abstract

Disregarding the quantum effects in inversion hole layers was shown to result in the false calculation of the distribution of the applied voltage in a tunnel MOS structure which consequently provokes substantial errors in estimating the tunnel currents and the energy of injected electrons.

Keywords

Inversion Layer Tunnel Current Gate Oxide Band Profile Base Voltage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • A. F. Shulekin
    • 1
  • M. I. Vexler
    • 2
  • H. Zimmermann
    • 2
  1. 1.Polytechnicheskaya 26A.F.Ioffe Physicotechnical InstituteRussia
  2. 2.Lehrstuhl für HalbleitertechnikChristian-Albrechts-UniversitätKielGermany

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