The Role of Quantization Effects in Inversion Hole Layers of Tunnel MOS Structures on n-Si Substrates

  • A. F. Shulekin
  • M. I. Vexler
  • H. Zimmermann
Conference paper


Disregarding the quantum effects in inversion hole layers was shown to result in the false calculation of the distribution of the applied voltage in a tunnel MOS structure which consequently provokes substantial errors in estimating the tunnel currents and the energy of injected electrons.


Inversion Layer Tunnel Current Gate Oxide Band Profile Base Voltage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    M. Depas, B. Vermeire, P.W. Mertens, M. Meuris, M.M. Heyns, “Wear-out of ultra-thin gate oxides during high-field electron tunneling,” Semicond. Sci. Tech- nol., vol. 10, pp. 753–758, 1995CrossRefGoogle Scholar
  2. [2]
    H.S. Momose, M. Ono, T. Yoshitomi, T. Ohguro, A. Nakamura, M. Saito, H. Iwai, “1.5 nm direct-tunneling gate oxide Si MOSFETs,” IEEE Trans. Electron Devices, vol. ED-43, no. 8, pp. 1233–1242, 1996CrossRefGoogle Scholar
  3. [3]
    K.M. Chu, D.L. Pulfrey, “An analysis of the DC and small-signal AC performance of the tunnel emitter transistor,” IEEE Trans. Electron Devices, vol. ED-35, no. 2, pp. 188–194, 1988CrossRefGoogle Scholar
  4. [4]
    I.V. Grekhov, A.F. Shulekin, M.I. Vexler, “Silicon Auger transistor — new insight into the performance of a tunnel MIS emitter transistor”, Solid-State Electron., vol. 38, no. 8, pp. 1533–1541, 1995CrossRefGoogle Scholar
  5. [5]
    W.K. Choi, A.E. Owen, “A thyristor model of switching in metal-thin insulator-semiconductor-semiconductor devices: the influence of insulating layer and illumination,”, J. Appl. Phys., vol. 68, no. 12, pp. 6447–6452, 1990CrossRefGoogle Scholar
  6. [6]
    T. Ando, A.B. Fowler, F. Stern, “Electronic properties of two-dimensional systems”, Rev. Mod. Phys., vol. 54, no. 2, 1982CrossRefGoogle Scholar
  7. [7]
    C.-Y. Hu, S. Banerjee, K. Sandra, R. Sivan, “Quantization effects in inversion layer of PMOSFET’s on Si(100) substrates”, IEEE Electron Device Letters, vol. 17, no. 6, pp. 276 – 278, 1996CrossRefGoogle Scholar

Copyright information

© Springer-Verlag/Wien 1998

Authors and Affiliations

  • A. F. Shulekin
    • 1
  • M. I. Vexler
    • 2
  • H. Zimmermann
    • 2
  1. 1.Polytechnicheskaya 26A.F.Ioffe Physicotechnical InstituteRussia
  2. 2.Lehrstuhl für HalbleitertechnikChristian-Albrechts-UniversitätKielGermany

Personalised recommendations