Abstract
Disregarding the quantum effects in inversion hole layers was shown to result in the false calculation of the distribution of the applied voltage in a tunnel MOS structure which consequently provokes substantial errors in estimating the tunnel currents and the energy of injected electrons.
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Shulekin, A.F., Vexler, M.I., Zimmermann, H. (1998). The Role of Quantization Effects in Inversion Hole Layers of Tunnel MOS Structures on n-Si Substrates. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_35
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_35
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