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MOSFET Two-Dimensional Doping Profile Determination

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Simulation of Semiconductor Devices and Processes

Abstract

Direct experimental measurement techniques have had limited success in the determination of the two-dimensional (2D) doping profile of a MOSFET. In this paper, we describe an alternative methodology that uses source/drain (S/D) diode and gate overlap capacitance measurements to determine the 2D profile by inverse modeling [1]. Our approach is based on the optimized tensor product spline (TPS) representation of the profile. We use nonlinear multiple outputs, least squares optimization to extract the values of the B-splines coefficients.

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References

  1. G. J. L. Ouwerling, Nondestructive One- And Two-Dimensional Doping Profiling By Inverse Methods, Delft University of Technology, UMI, Ann Arbor MI, 1989.

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Author information

Authors and Affiliations

  1. Advanced Semiconductor Development, Digital Equipment Corporation, Hudson, MA, 01749, USA

    N. Khalil & J. Faricelli

Authors
  1. N. Khalil
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  2. J. Faricelli
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Editor information

Editors and Affiliations

  1. Institut für Mikroelektronik, Technische Universität Wien, Austria

    Siegfried Selberherr , Hannes Stippel  & Ernst Strasser ,  & 

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© 1993 Springer-Verlag Wien

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Khalil, N., Faricelli, J. (1993). MOSFET Two-Dimensional Doping Profile Determination. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_90

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  • DOI: https://doi.org/10.1007/978-3-7091-6657-4_90

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7372-5

  • Online ISBN: 978-3-7091-6657-4

  • eBook Packages: Springer Book Archive

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