MOSFET Two-Dimensional Doping Profile Determination

  • N. Khalil
  • J. Faricelli


Direct experimental measurement techniques have had limited success in the determination of the two-dimensional (2D) doping profile of a MOSFET. In this paper, we describe an alternative methodology that uses source/drain (S/D) diode and gate overlap capacitance measurements to determine the 2D profile by inverse modeling [1]. Our approach is based on the optimized tensor product spline (TPS) representation of the profile. We use nonlinear multiple outputs, least squares optimization to extract the values of the B-splines coefficients.


Inverse Modeling Doping Profile Original Profile Depletion Capacitance Ning Tunneling Microscopy 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • N. Khalil
    • 1
  • J. Faricelli
    • 1
  1. 1.Advanced Semiconductor Development, Digital Equipment CorporationHudsonUSA

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