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MOSFET Two-Dimensional Doping Profile Determination

  • N. Khalil
  • J. Faricelli

Abstract

Direct experimental measurement techniques have had limited success in the determination of the two-dimensional (2D) doping profile of a MOSFET. In this paper, we describe an alternative methodology that uses source/drain (S/D) diode and gate overlap capacitance measurements to determine the 2D profile by inverse modeling [1]. Our approach is based on the optimized tensor product spline (TPS) representation of the profile. We use nonlinear multiple outputs, least squares optimization to extract the values of the B-splines coefficients.

Keywords

Inverse Modeling Doping Profile Original Profile Depletion Capacitance Ning Tunneling Microscopy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • N. Khalil
    • 1
  • J. Faricelli
    • 1
  1. 1.Advanced Semiconductor Development, Digital Equipment CorporationHudsonUSA

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