Simulation of Semiconductor Devices and Processes


  • Siegfried Selberherr
  • Hannes Stippel
  • Ernst Strasser

Table of contents

  1. Front Matter
    Pages i-xx
  2. K. Hess, L. F. Register
    Pages 9-16
  3. H. Masuda, H. Pimingstorfer, H. Sato, K. Tsuneno, K. Ichikawa, H. Tobe et al.
    Pages 21-24
  4. Ch. Pichler, S. Selberherr
    Pages 25-28
  5. R. Cartuyvels, R. Booth, S. Kubicek, L. Dupas, K. M. De Meyer
    Pages 29-32
  6. W. Kuźmicz, W. Denisiuk, J. Gempel, Z. Jaworski, M. Niewczas, A. Pfitzner et al.
    Pages 37-40
  7. K. Kells, S. Müller, G. Wachutka, W. Fichtner
    Pages 41-44
  8. H. Brunner, Y. C. Gerstenmaier, H.-J. Mattausch
    Pages 45-48
  9. M. Stecher, B. Meinerzhagen, I. Bork, W. L. Engl
    Pages 49-52
  10. B. H. Krabbenborg, H. C. de Graaff, A. J. Mouthan, H. Boezen, A. Bosma, C. Tekin
    Pages 57-60
  11. K. P. Traar, A. v. Schwerin
    Pages 61-64
  12. W. Bergner, B. Seidl, H. Wurzer, R. Mahnkopf, H. Klose
    Pages 73-76
  13. O. Heinreichsberger, M. Thurner, S. Selberherr
    Pages 85-88
  14. H. A. Van der Vorst, D. R. Fokkema, G. L. Sleijpen
    Pages 89-92
  15. M. M. De Souza, G. A. J. Amaratunga
    Pages 101-104
  16. C. S. Yun, O. K. Kwon, C. G. Hwang, H. J. Hwang
    Pages 105-108
  17. E. Tomacruz, M. Zuniga, R. Guerrieri, A. Neureuther, A. Sangiovanni-Vicentelli
    Pages 109-112
  18. A. Pierantoni, A. Liuzzo, P. Ciampolini, G. Baccarani
    Pages 125-128
  19. J. Litsios, S. Müller, W. Fichtner
    Pages 129-132
  20. M. Mouis, H. J. Gregory, S. Denorme, D. Mathiot, P. Ashburn, D. J. Robbins et al.
    Pages 141-144
  21. J. Esfandyari, G. Hobler, S. Senkader, H. Pötzl, B. Murphy
    Pages 145-148
  22. V. Gružinskis, E. Starikov, P. Shiktorov, L. Reggiani, M. Saraniti, L. Varani
    Pages 149-152
  23. D. Chen, Z. Yu, K.-C. -C. Wu, R. Goossens, R. W. Dutton
    Pages 157-160
  24. V. Senez, D. Collard, B. Baccus
    Pages 165-168
  25. A. Abramo, R. Brunetti, C. Jacoboni, F. Venturi, E. Sangiorgi
    Pages 181-184
  26. C. Brisset, P. Dollfus, N. Chemarin, R. Castagné, P. Hesto
    Pages 189-192
  27. T. Gonzàles, D. Pardo, L. Varani, L. Reggiani
    Pages 193-196
  28. M. Seifert, F. Richter, R. G. Spallek
    Pages 197-200

About these proceedings


The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out­ standing research and development results in the area of numerical process and de­ vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc­ tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand­ ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en­ gineers who need reliable numerical simulation tools for characterization, prediction, and development.


algorithms development modeling semiconductor devices simulation software

Editors and affiliations

  • Siegfried Selberherr
    • 1
  • Hannes Stippel
    • 1
  • Ernst Strasser
    • 1
  1. 1.Institut für MikroelektronikTechnische Universität WienAustria

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