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Simulation of Carrier Heating Induced Picosecond Operation of GaInAsP/InP Laser Diode

  • S. V. Polyakov
  • V. I. Tolstikhin

Abstract

A self-consistent model of a single-frequency GaInAsP/InP laser diode under carrier heating conditions is presented. The problem is formulated using the rate equations approach to the coupled carrier-phononphoton system and includes a priori all important interaction processes. The carried out simulation shows the efficiency of a carrier heating induced high-speed modulation.

Keywords

Laser Diode Carrier Temperature Carrier Heating Effective Photon Actual Time Scale 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • S. V. Polyakov
    • 1
  • V. I. Tolstikhin
    • 1
  1. 1.Institute of Radio Engineering & ElectronicsRussian Academy of SciencesMoscowRussia

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