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Simulation of Carrier Heating Induced Picosecond Operation of GaInAsP/InP Laser Diode

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Simulation of Semiconductor Devices and Processes

Abstract

A self-consistent model of a single-frequency GaInAsP/InP laser diode under carrier heating conditions is presented. The problem is formulated using the rate equations approach to the coupled carrier-phononphoton system and includes a priori all important interaction processes. The carried out simulation shows the efficiency of a carrier heating induced high-speed modulation.

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Author information

Authors and Affiliations

  1. Institute of Radio Engineering & Electronics, Russian Academy of Sciences, 11 Mokhovaya, RU-103907, Moscow, Russia

    S. V. Polyakov & V. I. Tolstikhin

Authors
  1. S. V. Polyakov
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  2. V. I. Tolstikhin
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Editor information

Editors and Affiliations

  1. Institut für Mikroelektronik, Technische Universität Wien, Austria

    Siegfried Selberherr , Hannes Stippel  & Ernst Strasser ,  & 

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© 1993 Springer-Verlag Wien

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Polyakov, S.V., Tolstikhin, V.I. (1993). Simulation of Carrier Heating Induced Picosecond Operation of GaInAsP/InP Laser Diode. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_79

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  • DOI: https://doi.org/10.1007/978-3-7091-6657-4_79

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7372-5

  • Online ISBN: 978-3-7091-6657-4

  • eBook Packages: Springer Book Archive

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