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Semianalytical Universal Simulation of the Electrical Properties of the Permeable Base Transistor

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Simulation of Semiconductor Devices and Processes

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Abstract

Using only a few numerical calculations, we give the analytical current-voltage and charge-voltage characteristics valid for any PBT. The highest unity current gain frequency (fT) corresponding to the current technology is on the order of 30 GHz; nevertheless, the oscillation frequency can be higher than 100 GHz.

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References

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Author information

Authors and Affiliations

  1. LPCS - URA CNRS 840 - Enserg, 23 rue des Martyrs, BP 257, F-38016, Grenoble Cédex, France

    P. Chenevier, G. Kamarinos & G. Pananakakis

Authors
  1. P. Chenevier
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  2. G. Kamarinos
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  3. G. Pananakakis
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Editor information

Editors and Affiliations

  1. Institut für Mikroelektronik, Technische Universität Wien, Austria

    Siegfried Selberherr , Hannes Stippel  & Ernst Strasser ,  & 

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© 1993 Springer-Verlag Wien

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Chenevier, P., Kamarinos, G., Pananakakis, G. (1993). Semianalytical Universal Simulation of the Electrical Properties of the Permeable Base Transistor. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_76

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  • DOI: https://doi.org/10.1007/978-3-7091-6657-4_76

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7372-5

  • Online ISBN: 978-3-7091-6657-4

  • eBook Packages: Springer Book Archive

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