Abstract
A multizone adaptive grid generation technique is developed and used with a curvilinear finite-volume approach to simulate multistep IC processes on non-planar multilayer structures with moving boundaries. The capabilities of the numerical scheme is demonstrated by simulating silicon oxidation and impurity diffusion in trench structures with corner angles equal to, and greater than 90°.
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© 1993 Springer-Verlag Wien
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Moallemi, M.K., Zhang, H. (1993). Multizone Adaptive Grid Generation Technique for Multilayer Multistep Process Simulation. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_50
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DOI: https://doi.org/10.1007/978-3-7091-6657-4_50
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7372-5
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