Multizone Adaptive Grid Generation Technique for Multilayer Multistep Process Simulation
A multizone adaptive grid generation technique is developed and used with a curvilinear finite-volume approach to simulate multistep IC processes on non-planar multilayer structures with moving boundaries. The capabilities of the numerical scheme is demonstrated by simulating silicon oxidation and impurity diffusion in trench structures with corner angles equal to, and greater than 90°.
KeywordsGrid System Oxide Growth Impurity Diffusion Grid Distribution Corner Angle
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