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Monte Carlo Analysis of Voltage Fluctuations in Two-Terminal Semiconductor Devices

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Simulation of Semiconductor Devices and Processes

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Abstract

Electronic noise in two-terminal semiconductor devices is investigated by an original Monte Carlo procedure which provides a spatial map of voltage fluctuations in the structures. Voltage-noise operation is employed. The results obtained for submicron n + nn + structures and Schottky-barrier diodes show that the high-resistivity regions are responsible for the low-frequency noise, while the low-resistivity regions mostly contribute to the noise at the highest frequencies.

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References

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Author information

Authors and Affiliations

  1. Departamento de Fisica Aplicada, Facultad de Ciencias, Universidad de Salamanca, Plaza de la Merced s/n, E-37008, Salamanca, Spain

    T. Gonzàles & D. Pardo

  2. Dipartimento di Fisica ed Istituto Nazionale di Fisica della Materia, Universitá di Modena, Via Campi 213/A, I-41100, Modena, Italy

    L. Varani & L. Reggiani

Authors
  1. T. Gonzàles
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  2. D. Pardo
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  3. L. Varani
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  4. L. Reggiani
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Editor information

Editors and Affiliations

  1. Institut für Mikroelektronik, Technische Universität Wien, Austria

    Siegfried Selberherr , Hannes Stippel  & Ernst Strasser ,  & 

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© 1993 Springer-Verlag Wien

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Gonzàles, T., Pardo, D., Varani, L., Reggiani, L. (1993). Monte Carlo Analysis of Voltage Fluctuations in Two-Terminal Semiconductor Devices. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_47

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  • DOI: https://doi.org/10.1007/978-3-7091-6657-4_47

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7372-5

  • Online ISBN: 978-3-7091-6657-4

  • eBook Packages: Springer Book Archive

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