Monte Carlo Analysis of Voltage Fluctuations in Two-Terminal Semiconductor Devices
Electronic noise in two-terminal semiconductor devices is investigated by an original Monte Carlo procedure which provides a spatial map of voltage fluctuations in the structures. Voltage-noise operation is employed. The results obtained for submicron n + nn + structures and Schottky-barrier diodes show that the high-resistivity regions are responsible for the low-frequency noise, while the low-resistivity regions mostly contribute to the noise at the highest frequencies.
KeywordsSpectral Density Noise Source Monte Carlo Analysis Voltage Fluctuation Average Voltage
Unable to display preview. Download preview PDF.