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Three-Dimensional Monte Carlo Simulation of Submicronic Devices

  • C. Brisset
  • P. Dollfus
  • N. Chemarin
  • R. Castagné
  • P. Hesto

Abstract

Our particle Monte-Carlo program for device modelling (MONACO) has been extended to the third dimension in geometric space. We describe the main features of this model. It has been used to simulate a 0.1 µm-gate-width N-channel MOSFET. Important geometric edge effects occur and induce a reduction of the effective gate width.

Keywords

Ohmic Contact Gate Length Gate Width Equilibrium Number Rectangular Meshing 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • C. Brisset
    • 1
  • P. Dollfus
    • 1
  • N. Chemarin
    • 1
  • R. Castagné
    • 1
  • P. Hesto
    • 1
  1. 1.Institut d’Electronique Fondamentale, CNRS URA022Université Paris-SudOrsay CédexFrance

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