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Three-Dimensional Monte Carlo Simulation of Submicronic Devices

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Simulation of Semiconductor Devices and Processes

Abstract

Our particle Monte-Carlo program for device modelling (MONACO) has been extended to the third dimension in geometric space. We describe the main features of this model. It has been used to simulate a 0.1 µm-gate-width N-channel MOSFET. Important geometric edge effects occur and induce a reduction of the effective gate width.

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References

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Author information

Authors and Affiliations

  1. Institut d’Electronique Fondamentale, CNRS URA022, Université Paris-Sud, Bât 220, F-91405, Orsay Cédex, France

    C. Brisset, P. Dollfus, N. Chemarin, R. Castagné & P. Hesto

Authors
  1. C. Brisset
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  2. P. Dollfus
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  3. N. Chemarin
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  4. R. Castagné
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  5. P. Hesto
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Editor information

Editors and Affiliations

  1. Institut für Mikroelektronik, Technische Universität Wien, Austria

    Siegfried Selberherr , Hannes Stippel  & Ernst Strasser ,  & 

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© 1993 Springer-Verlag Wien

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Brisset, C., Dollfus, P., Chemarin, N., Castagné, R., Hesto, P. (1993). Three-Dimensional Monte Carlo Simulation of Submicronic Devices. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_46

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  • DOI: https://doi.org/10.1007/978-3-7091-6657-4_46

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7372-5

  • Online ISBN: 978-3-7091-6657-4

  • eBook Packages: Springer Book Archive

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