Abstract
A new methodology is proposed to include the short range electron-electron interaction in the Spherical Harmonics Expansion approach to the Boltzmann Transport Equation, in the frame of spherical and non-parabolic bands. The electron energy distribution is computed in the uniform field case, and large corrections in the high-energy tail are observed.
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References
D. Ventura et al. An Efficient Method for Evaluating the Energy Distribution of Electrons in Semiconductors Based on Spherical Harmonics Expansion,IEICE Trans. Electron., vol. E75-C, no. 2, p. 194, 1992
A. Gnudi et al. One-Dimensional Simulation of a Bipolar Transistor by Means of Spherical Harmonics Expansion of the Boltzmann Transport Equation,Proc. of the SISDEP ‘91 Conf., p. 205, September 1991, Zurich
D. Ventura et al. Multidimensional Spherical Harmonics Expansion of Boltzmann Equation for Transport in Semiconductors, Appl. Math. Lett., vol. 5, no. 3, p. 85, 1992
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© 1993 Springer-Verlag Wien
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Ventura, D., Gnudi, A., Baccarani, G. (1993). Inclusion of Electron-Electron Scattering in the Spherical Harmonics Expansion Treatment of the Boltzmann Transport Equation. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_39
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DOI: https://doi.org/10.1007/978-3-7091-6657-4_39
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7372-5
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