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Dual Energy Transport Model with Coupled Lattice and Carrier Temperatures

  • D. Chen
  • Z. Yu
  • K.-C. -C. Wu
  • R. Goossens
  • R. W. Dutton

Abstract

A Dual Energy Transport (Dual ET) model was developed, that includes Poisson’s equation, carrier continuity equations and the energy balance and thermal diffusion equation. Six variables (electric potential, electron and hole concentrations, electron and hole temperatures, and lattice temperature) can be obtained, describing all electro-thermal effects in the electrons, holes and lattice subsytems. Results for diode breakdown are shown.

Keywords

Energy Transport Forward Bias Lattice Temperature Doping Profile Couple Lattice 
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References

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    D. Chen, E. C. Kan, U. Ravaioli, C.-W. Shu and R. W. Dutton, IEEE Elec. Dev. Lett, vol. 13, no. 1, pp. 26–28, Jan. 1992.CrossRefGoogle Scholar
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    D. Chen, E. C. Kan, U. Ravaioli, Z. Yu, K.-C. Wu and R. W. Dutton, to be published.Google Scholar
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    S. Selberherr, Analysis and Simulation of Semiconductor Devices,Vienna: Springer, 1984.CrossRefGoogle Scholar
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    K. Bløtekjwr, IEEE Trans. Elec. Dev.,vol. 17, p. 38, 1970.CrossRefGoogle Scholar
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    G. K. Wachutka, IEEE Trans. CAD,vol. 9, no. 11, pp. 1141–1149, Nov. 1990.Google Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • D. Chen
    • 1
  • Z. Yu
    • 1
  • K.-C. -C. Wu
    • 1
  • R. Goossens
    • 1
  • R. W. Dutton
    • 1
  1. 1.Integrated Circuits LaboratoryStanford UniversityStanfordUSA

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