Dual Energy Transport Model with Coupled Lattice and Carrier Temperatures
A Dual Energy Transport (Dual ET) model was developed, that includes Poisson’s equation, carrier continuity equations and the energy balance and thermal diffusion equation. Six variables (electric potential, electron and hole concentrations, electron and hole temperatures, and lattice temperature) can be obtained, describing all electro-thermal effects in the electrons, holes and lattice subsytems. Results for diode breakdown are shown.
KeywordsEnergy Transport Forward Bias Lattice Temperature Doping Profile Couple Lattice
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