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Simulation of Denuded Zone Formation in CZ Silicon

  • J. Esfandyari
  • G. Hobler
  • S. Senkader
  • H. Pötzl
  • B. Murphy
Conference paper

Abstract

In ULSI device processing technology, internal gettering (IG) of metallic contaminants is an important issue. The structure of IG wafers consists of the bulk microdefect region and a defect-free subsurface region, termed as “denuded zone” (DZ). In our work, we present a detailed analysis of the coupled diffusion-oxygen precipitation problem encountered in the simulation of the denuded zone formation.

Keywords

Wafer Surface Size Distribution Function Interstitial Oxygen Denude Zone Metallic Contaminant 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • J. Esfandyari
    • 1
  • G. Hobler
    • 1
  • S. Senkader
    • 1
  • H. Pötzl
    • 1
  • B. Murphy
    • 2
  1. 1.Institut für Allgemeine Elektrotechnik und ElektronikTU ViennaWienAustria
  2. 2.Wacker-Chemitronic GmbHBurghausenGermany

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