Abstract
In ULSI device processing technology, internal gettering (IG) of metallic contaminants is an important issue. The structure of IG wafers consists of the bulk microdefect region and a defect-free subsurface region, termed as “denuded zone” (DZ). In our work, we present a detailed analysis of the coupled diffusion-oxygen precipitation problem encountered in the simulation of the denuded zone formation.
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© 1993 Springer-Verlag Wien
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Esfandyari, J., Hobler, G., Senkader, S., Pötzl, H., Murphy, B. (1993). Simulation of Denuded Zone Formation in CZ Silicon. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_35
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DOI: https://doi.org/10.1007/978-3-7091-6657-4_35
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7372-5
Online ISBN: 978-3-7091-6657-4
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