Abstract
This paper describes a unified transport model which self-consistently accounts for thermal effects and hot-carrier phenomena. Such result is achieved by including the energy balance equations for electrons, holes and lattice. The model has been incorporated into the three-dimensional device simulator HFIELDS3D and its numerical efficiency is tested by simulating both unipolar and bipolar devices.
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© 1993 Springer-Verlag Wien
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Pierantoni, A., Liuzzo, A., Ciampolini, P., Baccarani, G. (1993). Three-Dimensional Implementation of a Unified Transport Model. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_30
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DOI: https://doi.org/10.1007/978-3-7091-6657-4_30
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7372-5
Online ISBN: 978-3-7091-6657-4
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