Three-Dimensional Numerical Simulation for Low Dopant Diffusion in Silicon
A numerical simulator for the calculation of redistribution of low dopant diffusion in silicon has been developed in three-dimensional(3D) geometry. The diffusion behavior of boron is investigated by using three mask structures and changing the contact hole sizes. The results of calculations show that 3D diffusion effects will be very important in the development of submicron process and small device.
KeywordsHole Size Junction Depth Dopant Diffusion Mask Structure Fast Direct Solver
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