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Three-Dimensional Numerical Simulation for Low Dopant Diffusion in Silicon

  • C. S. Yun
  • O. K. Kwon
  • C. G. Hwang
  • H. J. Hwang
Conference paper

Abstract

A numerical simulator for the calculation of redistribution of low dopant diffusion in silicon has been developed in three-dimensional(3D) geometry. The diffusion behavior of boron is investigated by using three mask structures and changing the contact hole sizes. The results of calculations show that 3D diffusion effects will be very important in the development of submicron process and small device.

Keywords

Hole Size Junction Depth Dopant Diffusion Mask Structure Fast Direct Solver 
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Reference

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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • C. S. Yun
    • 1
  • O. K. Kwon
    • 2
  • C. G. Hwang
    • 1
  • H. J. Hwang
    • 2
  1. 1.Advanced Technology Center, Memory Division, Semiconductor BusinessSamSung Electronics Co., Ltd.KyungKiKorea
  2. 2.Department of Electronic EngineeringChung Ang UniversitySeoulKorea

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