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Three-Dimensional Numerical Simulation for Low Dopant Diffusion in Silicon

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Simulation of Semiconductor Devices and Processes

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Abstract

A numerical simulator for the calculation of redistribution of low dopant diffusion in silicon has been developed in three-dimensional(3D) geometry. The diffusion behavior of boron is investigated by using three mask structures and changing the contact hole sizes. The results of calculations show that 3D diffusion effects will be very important in the development of submicron process and small device.

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Reference

  1. M.R. Pinto, J. Bude and C.S. Rafferty,“Simulation of ULSI Silicon MOSFET’s,” VPAD, pp22–25, May, 1993.

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Author information

Authors and Affiliations

  1. Advanced Technology Center, Memory Division, Semiconductor Business, SamSung Electronics Co., Ltd., KyungKi, Korea

    C. S. Yun & C. G. Hwang

  2. Department of Electronic Engineering, Chung Ang University, Seoul, Korea

    O. K. Kwon & H. J. Hwang

Authors
  1. C. S. Yun
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  2. O. K. Kwon
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  3. C. G. Hwang
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  4. H. J. Hwang
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Editor information

Editors and Affiliations

  1. Institut für Mikroelektronik, Technische Universität Wien, Austria

    Siegfried Selberherr , Hannes Stippel  & Ernst Strasser ,  & 

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© 1993 Springer-Verlag Wien

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Yun, C.S., Kwon, O.K., Hwang, C.G., Hwang, H.J. (1993). Three-Dimensional Numerical Simulation for Low Dopant Diffusion in Silicon. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_25

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  • DOI: https://doi.org/10.1007/978-3-7091-6657-4_25

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7372-5

  • Online ISBN: 978-3-7091-6657-4

  • eBook Packages: Springer Book Archive

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