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3D Thermal/Electrical Simulation of Breakdown in a BJT Using a Circuit Simulator and a Layout-to-Circuit Extraction Tool

  • B. H. Krabbenborg
  • H. C. de Graaff
  • A. J. Mouthan
  • H. Boezen
  • A. Bosma
  • C. Tekin
Conference paper

Abstract

A method for the generation of circuit models for fast thermal-electrical simulation of 3D device structures with a circuit simulator is proposed. It has been used for simulation of the influence of layout parameters on the Safe Operating Area of a BJT and to study the mechanisms that start breakdown processes. For a thermally instable switch-on behaviour of a BJT, a comparison with measurements has been made.

Keywords

Circuit Simulator Base Resistance Base Contact Extraction Tool Emitter Area 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    B.H. Krabbenborg, A. Bosma, A.J. Mouthaan, H. Boezen, Proceedings of the Ninth International Conference on the Numerical Analysis of Semiconductor devices and Integrated Circuits, 6–9 April 1993, Coppermountain Colorado, USA, pp. 99–100.Google Scholar
  2. [2]
    B.H. Krabbenborg, R. Beltman, Ph. Wolbert, A.J. Mouthaan, Journal of Electrostatics, Vol. 28, 1992, pp. 285–299.CrossRefGoogle Scholar
  3. [3]
    M. Latif, P.R. Bryant, IEEE transactions on CAD, Vol. CAD-1, No. 2, April 1982, pp. 94–101.Google Scholar
  4. [4]
    P.C. Munro, F.-Q. Ye, IEEE Journal of Solid State Circuits, Vol. SC-26, No. 9, Sept. 1991, pp. 1321–1324.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • B. H. Krabbenborg
    • 1
  • H. C. de Graaff
    • 1
  • A. J. Mouthan
    • 1
  • H. Boezen
    • 2
  • A. Bosma
    • 1
  • C. Tekin
    • 1
  1. 1.MESA Research InstituteUniversity of TwenteEnschedeThe Netherlands
  2. 2.Philips SemiconductorsNijmegenThe Netherlands

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