Inverse Modeling of Impact Ionization Rate Formula Through Comparison Between Simulation and Experimental Results of MOS Device Characteristics
This paper appraises the degree of agreement between simulated and experimental results of drain current versus drain voltage (I d - V d). It also derives the impact ionization rate formula inversely by compared the simulated and experimental dependence of the substrate current(Isub) on the gate voltage(V g). We found that: (1) for I d –V d characteristics, the agreement in the linear region was off, but overall agreement was fairly good, and (2) the simulated I su b -C V g characteristics were in fairly good agreement with the experimental characteristics when the modified Keldish formula P ii = P 0((E - 1.12)/1.12)n with n of 7 and P 0 of 2.8 × 1011 s -1 was used as the formula for the impact ionization rate.
KeywordsGate Voltage Impact Ionization Inverse Modeling Drain Current Drain Voltage
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- T. Kunikiyo, Y. Kamakura, M. Yamaji, H. Mizuno,M. Takenaka, K. Taniguchi and C. Hamaguchi, VPAD, 40(1993).Google Scholar