Inverse Modeling of Impact Ionization Rate Formula Through Comparison Between Simulation and Experimental Results of MOS Device Characteristics

  • S. Imanaga
  • K. Hane
  • Y. Hayafuji
Conference paper


This paper appraises the degree of agreement between simulated and experimental results of drain current versus drain voltage (I d - V d). It also derives the impact ionization rate formula inversely by compared the simulated and experimental dependence of the substrate current(Isub) on the gate voltage(V g). We found that: (1) for I d V d characteristics, the agreement in the linear region was off, but overall agreement was fairly good, and (2) the simulated I su b -C V g characteristics were in fairly good agreement with the experimental characteristics when the modified Keldish formula P ii = P 0((E - 1.12)/1.12)n with n of 7 and P 0 of 2.8 × 1011 s -1 was used as the formula for the impact ionization rate.


Gate Voltage Impact Ionization Inverse Modeling Drain Current Drain Voltage 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • S. Imanaga
    • 1
  • K. Hane
    • 1
  • Y. Hayafuji
    • 1
  1. 1.Yokohama Technology CenterSony CorporationHodogaya, Yokohama, KanagawaJapan

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