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Modeling of Localized Lifetime Tailoring in Silicon Devices

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Simulation of Semiconductor Devices and Processes

Abstract

A new accurate method for simulation of the device that is subjected to low-dose high-energy ion irradiation (hydrogen, helium) is compared with the ordinary simulation technique which utilizes a structured lifetime profile as an input into SRH recombination model. The novel method, involving ion-implantation process simulator, expert system, and multilevel recombination model is described. Spatial distribution of the minority carrier lifetime of irradiated device is drawn for different injection levels. Simulated trade-off between forward voltage drop and reverse recovery time is presented for both the hydrogen and helium irradiation.

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References

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Author information

Authors and Affiliations

  1. Department of Microelectronics, Czech Technical University of Prague, Technická 2, CS-16627, Praha 6, Czech Republic

    P. Hazdra & J. Vobecký

Authors
  1. P. Hazdra
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  2. J. Vobecký
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Editor information

Editors and Affiliations

  1. Institut für Mikroelektronik, Technische Universität Wien, Austria

    Siegfried Selberherr , Hannes Stippel  & Ernst Strasser ,  & 

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© 1993 Springer-Verlag Wien

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Hazdra, P., Vobecký, J. (1993). Modeling of Localized Lifetime Tailoring in Silicon Devices. In: Selberherr, S., Stippel, H., Strasser, E. (eds) Simulation of Semiconductor Devices and Processes. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6657-4_108

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  • DOI: https://doi.org/10.1007/978-3-7091-6657-4_108

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7372-5

  • Online ISBN: 978-3-7091-6657-4

  • eBook Packages: Springer Book Archive

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