Modeling of Localized Lifetime Tailoring in Silicon Devices

  • P. Hazdra
  • J. Vobecký


A new accurate method for simulation of the device that is subjected to low-dose high-energy ion irradiation (hydrogen, helium) is compared with the ordinary simulation technique which utilizes a structured lifetime profile as an input into SRH recombination model. The novel method, involving ion-implantation process simulator, expert system, and multilevel recombination model is described. Spatial distribution of the minority carrier lifetime of irradiated device is drawn for different injection levels. Simulated trade-off between forward voltage drop and reverse recovery time is presented for both the hydrogen and helium irradiation.


Minority Carrier Lifetime Silicon Device Recombination Model Power Diode Exact Simulation 
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Copyright information

© Springer-Verlag Wien 1993

Authors and Affiliations

  • P. Hazdra
    • 1
  • J. Vobecký
    • 1
  1. 1.Department of MicroelectronicsCzech Technical University of PraguePraha 6Czech Republic

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