Abstract
We present a novel methodology for characterization of sub-quartermicron CMOS technologies. It involves process calibration, device calibration employing two-dimensional device simulation and automated Technology Computer Aided Design (TCAD) optimization, and, finally, transient mixed-mode device/circuit simulation. The proposed methodology was tested on 0.25 εm technology and applied to 0.13 εm technology in order to estimate ring oscillator speed. The simulation results show an excellent agreement with available experimental data.
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© 2001 Springer-Verlag Wien
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Palankovski, V., Belova*, N., Grasser, T., Puchner, H., Aronowitz, S., Selberherr, S. (2001). A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_99
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_99
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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