Characterization of Low-Frequency Noise of MOSFETs Using 2-D Device Simulator
Low-frequency noise of the MOSFET was simulated using the transfer impedance method together with a 2-D device simulator. In the simulation, various generation-recombination (GR) components such as SRH recombination centers and surface traps of various lifetimes are taken into account. It is shown that lifetimes of traps determine the characteristics of low-frequency noise. Also is shown that the GR process not only at the surface but also in the bulk may be responsible for the low-frequency noise.
KeywordsNoise Source Surface Trap Device Simulator Surface Recombination Velocity Gate Oxide Thickness
Unable to display preview. Download preview PDF.
- W. S. Choi, J. K. Ahn, Y. J. Park, H. S. Min and C. G. Hwang,IEEE Trans. CAD, vol. 13, p. 899, 1994Google Scholar
- A. Gnudi, P. Ciampolini, R. Guerrieri, M. Rudan and G Baccarani, Proceeding of NASCODE V, p. 207, 1987Google Scholar
- A. van der Ziel, Noise in Solid State Devices and Circuits, John Wiley and Sons, 1986Google Scholar
- C. H. Park, H. S. Min and Y. J. Park, Proceedings of ICNF 2001, to be publishedGoogle Scholar