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Characterization of Low-Frequency Noise of MOSFETs Using 2-D Device Simulator

  • Hyunchul Nah
  • Young June Park
  • Hong-Shick Min
  • Chanho Lee
  • Hyungsoon Shin
Conference paper

Abstract

Low-frequency noise of the MOSFET was simulated using the transfer impedance method together with a 2-D device simulator. In the simulation, various generation-recombination (GR) components such as SRH recombination centers and surface traps of various lifetimes are taken into account. It is shown that lifetimes of traps determine the characteristics of low-frequency noise. Also is shown that the GR process not only at the surface but also in the bulk may be responsible for the low-frequency noise.

Keywords

Noise Source Surface Trap Device Simulator Surface Recombination Velocity Gate Oxide Thickness 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Hyunchul Nah
    • 1
  • Young June Park
    • 1
  • Hong-Shick Min
    • 1
  • Chanho Lee
    • 2
  • Hyungsoon Shin
    • 3
  1. 1.School of EECSSeoul National UniversitySeoulKorea
  2. 2.School of EESoongsil UniversitySeoulKorea
  3. 3.School of IEEEwha Womans UniversitySeoulKorea

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