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Characterization of Low-Frequency Noise of MOSFETs Using 2-D Device Simulator

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Simulation of Semiconductor Processes and Devices 2001

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Abstract

Low-frequency noise of the MOSFET was simulated using the transfer impedance method together with a 2-D device simulator. In the simulation, various generation-recombination (GR) components such as SRH recombination centers and surface traps of various lifetimes are taken into account. It is shown that lifetimes of traps determine the characteristics of low-frequency noise. Also is shown that the GR process not only at the surface but also in the bulk may be responsible for the low-frequency noise.

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Author information

Authors and Affiliations

  1. School of EECS, Seoul National University, Seoul, Korea

    Hyunchul Nah, Young June Park & Hong-Shick Min

  2. School of EE, Soongsil University, Seoul, Korea

    Chanho Lee

  3. School of IEE, Ewha Womans University, Seoul, Korea

    Hyungsoon Shin

Authors
  1. Hyunchul Nah
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  2. Young June Park
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  3. Hong-Shick Min
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  4. Chanho Lee
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  5. Hyungsoon Shin
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Editor information

Editors and Affiliations

  1. “Demokritos” National Center for Scientific Research, Institute of Microelectronics, Athens, Greece

    Dimitris Tsoukalas  & Christos Tsamis  & 

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© 2001 Springer-Verlag Wien

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Nah, H., Park, Y.J., Min, HS., Lee, C., Shin, H. (2001). Characterization of Low-Frequency Noise of MOSFETs Using 2-D Device Simulator. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_92

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  • DOI: https://doi.org/10.1007/978-3-7091-6244-6_92

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7278-0

  • Online ISBN: 978-3-7091-6244-6

  • eBook Packages: Springer Book Archive

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