Characterization of Low-Frequency Noise of MOSFETs Using 2-D Device Simulator

  • Hyunchul Nah
  • Young June Park
  • Hong-Shick Min
  • Chanho Lee
  • Hyungsoon Shin
Conference paper


Low-frequency noise of the MOSFET was simulated using the transfer impedance method together with a 2-D device simulator. In the simulation, various generation-recombination (GR) components such as SRH recombination centers and surface traps of various lifetimes are taken into account. It is shown that lifetimes of traps determine the characteristics of low-frequency noise. Also is shown that the GR process not only at the surface but also in the bulk may be responsible for the low-frequency noise.


Noise Source Surface Trap Device Simulator Surface Recombination Velocity Gate Oxide Thickness 
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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Hyunchul Nah
    • 1
  • Young June Park
    • 1
  • Hong-Shick Min
    • 1
  • Chanho Lee
    • 2
  • Hyungsoon Shin
    • 3
  1. 1.School of EECSSeoul National UniversitySeoulKorea
  2. 2.School of EESoongsil UniversitySeoulKorea
  3. 3.School of IEEEwha Womans UniversitySeoulKorea

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