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Electrothermal Device Simulation of an ESD Protection Structure Based on Bipolar DC Characteristics

  • A. Icaza Deckelmann
  • G. Wachutka
  • G. Groos
  • W. Kanert
Conference paper

Abstract

The high current characteristics of an ESD protection structure fabricated in a smart power technology is calculated by the use of electrothermal device simulation. We find reasonable agreement with experimental results after careful calibration of the technology-dependent transport parameters. The still existing differences between measurement and simulation results are discussed, together with some conclusions for the application of our simulation strategy in future.

Keywords

Breakdown Voltage Bipolar Transistor Terminal Voltage Current Gain Careful Calibration 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    A. Amerasekera and Ch. Duvvury: ESD in Silicon Integrated Circuits; J. Wiley & Sons, Chichester (1995)Google Scholar
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    D.J. Roulston: Bipolar Semiconductor Devices; McGraw-Hill, New York (1990)Google Scholar
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    S. Selberherr: Analysis and Simulation of Semiconductor Devices; Springer-Verlag, Wien (1984)CrossRefGoogle Scholar
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    K. Esmark et al.: Simulation and experimental study of temperature distribution during ESD stress in smart-power technology ESD protection structures; Proc. IRPS 2000, pp. 304–9Google Scholar
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    K. Esmark et al.: Advanced 2D/3D ESD Device Simulation ­ A Powerful Tool Already Used in a Pre-Si Phase; Proc. EOS/ESD 2000, pp. 420–9Google Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • A. Icaza Deckelmann
    • 1
  • G. Wachutka
    • 1
  • G. Groos
    • 2
  • W. Kanert
    • 2
  1. 1.Institute for Physics of ElectrotechnologyMunich University of TechnologyMunichGermany
  2. 2.Infineon Technologies Balanstr. 73MunichGermany

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