Electrothermal Device Simulation of an ESD Protection Structure Based on Bipolar DC Characteristics
The high current characteristics of an ESD protection structure fabricated in a smart power technology is calculated by the use of electrothermal device simulation. We find reasonable agreement with experimental results after careful calibration of the technology-dependent transport parameters. The still existing differences between measurement and simulation results are discussed, together with some conclusions for the application of our simulation strategy in future.
KeywordsBreakdown Voltage Bipolar Transistor Terminal Voltage Current Gain Careful Calibration
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- A. Amerasekera and Ch. Duvvury: ESD in Silicon Integrated Circuits; J. Wiley & Sons, Chichester (1995)Google Scholar
- D.J. Roulston: Bipolar Semiconductor Devices; McGraw-Hill, New York (1990)Google Scholar
- K. Esmark et al.: Simulation and experimental study of temperature distribution during ESD stress in smart-power technology ESD protection structures; Proc. IRPS 2000, pp. 304–9Google Scholar
- K. Esmark et al.: Advanced 2D/3D ESD Device Simulation A Powerful Tool Already Used in a Pre-Si Phase; Proc. EOS/ESD 2000, pp. 420–9Google Scholar