Abstract
The high current characteristics of an ESD protection structure fabricated in a smart power technology is calculated by the use of electrothermal device simulation. We find reasonable agreement with experimental results after careful calibration of the technology-dependent transport parameters. The still existing differences between measurement and simulation results are discussed, together with some conclusions for the application of our simulation strategy in future.
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© 2001 Springer-Verlag Wien
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Deckelmann, A.I., Wachutka, G., Groos, G., Kanert, W. (2001). Electrothermal Device Simulation of an ESD Protection Structure Based on Bipolar DC Characteristics. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_91
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_91
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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