An Agent-based Common Software Platform Applied to Multi-scale Device and Process Simulations
This paper describes a common software platform that allows users to combine multi-scale physical simulations in the form of agents. To demonstrate the benefit of combing multiple simulations, hydrogen desorption at the interface of gate oxide and Si-substrate due to hot electrons in a deep sub-micron device is analysed by coupling device and lattice Monte Carlo simulation. Deposition profiles on a large-scale wafer are studied by using particle method hybridised with continuum simulation. The desorption probability of hydrogen and the coverage of deposition layer are shown to be strongly dependent on the position under the gate and on the wafer respectively.
KeywordsHydrogen Desorption Hydrodynamic Simulation Deposition Profile Sticking Coefficient Parallel Virtual Machine
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