Abstract
We present numerical investigations of a novel technique for reducing the thermal cycle during lamp-heated rapid-thermal processing (RTP). In our concept the reflective reactor-wall surface is replaced by an electro-optically switchable film, which allows efficient heating and subsequent radiative cooling of processed wafers. Our approach provides an efficient solution to ultrashallow junction requirements for forthcoming CMOS generations.
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Based on U.S. patents 6,047,107 (4 April, 2000) and 6,173,116 (9 Jan., 2001) by Roozeboom F., Duine P.A. and Van der Sluis P; see also Roozeboom F., Van der Sluis P. and Cowern N.E.B., Electrochem. Soc. Symp. Proc. 2001–8 (2001) 41
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© 2001 Springer-Verlag Wien
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Cowern, N.E.B., Roozeboom, F., Van der Sluis, P. (2001). Investigation of a Novel Rapid Thermal Processing Concept Using an Electro-Optically Controlled Radiation Cavity. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_78
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_78
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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