Abstract
Parameters for a generalized mobility model are extracted from hardware measurements of strained silicon NMOS devices. Only the phone limited mobility parameter was shown to vary with amount of strain in the silicon.Using results of the mobility model fitting, simulations of strained and unstrained silicon devices were performed. These simulations indicated that strained silicon devices should have improved short channel control as well as yield a minimum of 50% improvement in on current.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Vogelsang, T. and Hofmann, K.R., Proc. of Dev. Res. Conf., pp. 34–35, 1992.
Welser, J., et al., IEEE Elect. Dev. Lett. 15, 3: pp. 100–102, 1994.
Rim, K., et al., IEEE Trans. Elect. Dev. 47, 7: pp. 1406–1415, 2000.
Buturla, E.M.et alIBM J. Res. Develop., 25: pp. 218 f.., 1981.
Mujtaba, S.,Ph.D. dissertation, Stanford Univ., 1995.
Laudon, M., et al., App. Phys. Lett. 78, 2: pp. 201–203, 2001.
Rim, K.et alVLSI Symp. Tech. Dig., 2001.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2001 Springer-Verlag Wien
About this paper
Cite this paper
Oldiges, P., Wang, X., Ieong, M., Fischer, S., Rim, K. (2001). A Practical Approach to Modeling Strained Silicon NMOS Devices. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_65
Download citation
DOI: https://doi.org/10.1007/978-3-7091-6244-6_65
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
eBook Packages: Springer Book Archive