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A Practical Approach to Modeling Strained Silicon NMOS Devices

  • Phil Oldiges
  • Xinlin Wang
  • MeiKei Ieong
  • Stephen Fischer
  • Ken Rim

Abstract

Parameters for a generalized mobility model are extracted from hardware measurements of strained silicon NMOS devices. Only the phone limited mobility parameter was shown to vary with amount of strain in the silicon.Using results of the mobility model fitting, simulations of strained and unstrained silicon devices were performed. These simulations indicated that strained silicon devices should have improved short channel control as well as yield a minimum of 50% improvement in on current.

Keywords

Mobility Model Limited Mobility Gate Length Short Channel SiGe Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Phil Oldiges
    • 1
  • Xinlin Wang
    • 1
  • MeiKei Ieong
    • 1
  • Stephen Fischer
    • 1
  • Ken Rim
    • 1
  1. 1.IBM T.J. Watson Research CenterYorktown Heights, NYNY

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