Neutron-Ser Modeling & Simulation for 0.181,1,M Cmos Technology
This paper presents a new and physical modeling approach for neutron SER with excellent accuracy demonstrated on SRAMs fabricated using 0.18µm CMOS technology. The SER contribution of each type of recoil ion and a fast roll-off behavior of neutron SER for high QCRIT nodes are reported for the first time.
KeywordsCharge Collection Soft Error Charge Collection Efficiency Silicon Nucleus Numerical Device Simulator
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