Abstract
This paper presents a new and physical modeling approach for neutron SER with excellent accuracy demonstrated on SRAMs fabricated using 0.18µm CMOS technology. The SER contribution of each type of recoil ion and a fast roll-off behavior of neutron SER for high QCRIT nodes are reported for the first time.
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Hakim, C.D., Walstra, S., Hareland, S., Maiz, J., Yu, S., Lee, SW. (2001). Neutron-Ser Modeling & Simulation for 0.181,1,M Cmos Technology. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_62
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_62
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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