Compact device model for partially depletedSOI-MOSFETs
An accurate simulation of integrated circuits consisting of partially depleted (PD) SOI MOSFETs requires a compact MOS model including parasitic phenomena arising from the floating body. Floating body effects include the occurrence of kink in the saturation current and anomalous sub-threshold slope where impact ionization becomes relevant. In addition, the drain current overshoot [1,2] at “switch on” has been reported even in the absence of impact ionization. The drain current overshoot in PD SOI MOSFETs has a significant history dependence: during switching the body potential proportional to the remaining body charge is determined by both carrier generation/recombination in the body and leakage current through the drain/source-to-body junctions
KeywordsImpact Ionization Drain Voltage NMOS Transistor Floating Body Body Potential
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- P. Su et al., Proc. of IEEE CICC, Orlando, p.197, 2000Google Scholar