Abstract
An accurate simulation of integrated circuits consisting of partially depleted (PD) SOI MOSFETs requires a compact MOS model including parasitic phenomena arising from the floating body. Floating body effects include the occurrence of kink in the saturation current and anomalous sub-threshold slope where impact ionization becomes relevant. In addition, the drain current overshoot [1,2] at “switch on” has been reported even in the absence of impact ionization. The drain current overshoot in PD SOI MOSFETs has a significant history dependence: during switching the body potential proportional to the remaining body charge is determined by both carrier generation/recombination in the body and leakage current through the drain/source-to-body junctions
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© 2001 Springer-Verlag Wien
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Fujii, Y., Yoshimura, R., Matsuoka, T., Taniguchi, K. (2001). Compact device model for partially depletedSOI-MOSFETs. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_51
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_51
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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