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Compact device model for partially depletedSOI-MOSFETs

For simulation of transient drain current arising from the floating body effects
  • Y. Fujii
  • R. Yoshimura
  • T. Matsuoka
  • K. Taniguchi
Conference paper

Abstract

An accurate simulation of integrated circuits consisting of partially depleted (PD) SOI MOSFETs requires a compact MOS model including parasitic phenomena arising from the floating body. Floating body effects include the occurrence of kink in the saturation current and anomalous sub-threshold slope where impact ionization becomes relevant. In addition, the drain current overshoot [1,2] at “switch on” has been reported even in the absence of impact ionization. The drain current overshoot in PD SOI MOSFETs has a significant history dependence: during switching the body potential proportional to the remaining body charge is determined by both carrier generation/recombination in the body and leakage current through the drain/source-to-body junctions

Keywords

Impact Ionization Drain Voltage NMOS Transistor Floating Body Body Potential 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    K. Kato and K. Taniguchi, IEEE Trans., Electron Devices, ED-33, 133(1986)CrossRefGoogle Scholar
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    H.C. Shin et al., IEEE Trans., Electron Devices, ED-43, 318(1996)CrossRefGoogle Scholar
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    P. Su et al., Proc. of IEEE CICC, Orlando, p.197, 2000Google Scholar
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    A.L. Lacaita and L.M. Perron, Microelectronic Engineering, 48, 319(1999)CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Y. Fujii
    • 1
  • R. Yoshimura
    • 1
  • T. Matsuoka
    • 1
  • K. Taniguchi
    • 1
  1. 1.Department of Electronic and Information Systems, Graduate School of EngineeringOsaka UniversitySuita, OsakaJapan

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