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Simulation of Vertical CEO-FETs by a Coupled Solution of the Schrödinger Equation with a Hydrodynamic Transport Model

  • J. Höntschel
  • R. Stenzel
  • W. Klix
  • F. Ertl
  • T. Asperger
  • R. A. Deutschmann
  • M. Bichler
  • G. Abstreiter
Conference paper

Abstract

This paper describes the simulations of vertical cleaved-edge overgrowth field effect transistors (CEO-FETs). For the simulation the device simulator SIMBA is used, which is capable to handle complex device geometries as well as several physical models represented by certain sets of partial differential equations. With a multidimensional solution of the Poisson equation the Schrödinger equation is solved either in one or in two dimensions according to the confinement of the electrons in the area where quantum mechanical effects are expected. As a new feature the involvement of a hydrodynamic (HD) transport model is implemented to include non-equilibrium transport phenomena in extremely short channels The experimental results are compared with the simulated data of this device.

Keywords

Transfer Characteristic Output Characteristic Device Characteristic Schrodinger Equation Discrete Energy Level 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. [1]
    Pfeiffer L.N., West K.W., Stormer H.L., Eisenstein J.P., Baldwin K.W., Gershoni G., Spector J.: Appl. Phys. Lett. 56, 1990, pp. 1697–1699.CrossRefGoogle Scholar
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    Pigorsch C., Klix W., Stenzel R.: Microelectronic Engineering 43–44, 1998, pp. 325–333.Google Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • J. Höntschel
    • 1
  • R. Stenzel
    • 1
  • W. Klix
    • 2
  • F. Ertl
    • 3
  • T. Asperger
    • 3
  • R. A. Deutschmann
    • 3
  • M. Bichler
    • 3
  • G. Abstreiter
    • 3
  1. 1.University of Applied Sciences Dresden Friedrich-List-Platz 1GERMANY
  2. 2.SFB 358 Mommsenstr. 13University of Technology DresdenGERMANY
  3. 3.Walter Schottky InstituteTU Munich Am CoulombwallGERMANY

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