Abstract
This paper describes the simulations of vertical cleaved-edge overgrowth field effect transistors (CEO-FETs). For the simulation the device simulator SIMBA is used, which is capable to handle complex device geometries as well as several physical models represented by certain sets of partial differential equations. With a multidimensional solution of the Poisson equation the Schrödinger equation is solved either in one or in two dimensions according to the confinement of the electrons in the area where quantum mechanical effects are expected. As a new feature the involvement of a hydrodynamic (HD) transport model is implemented to include non-equilibrium transport phenomena in extremely short channels The experimental results are compared with the simulated data of this device.
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References
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© 2001 Springer-Verlag Wien
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Höntschel, J. et al. (2001). Simulation of Vertical CEO-FETs by a Coupled Solution of the Schrödinger Equation with a Hydrodynamic Transport Model. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_48
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_48
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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