Abstract
A stochastic approach to a recently proposed model of terminal current fluctuations is presented. Two kinds of boundary conditions suitable for noise simulations in semiconductor devices are proposed. The properties and the domain of application of the two models are investigated and the conclusions are drawn from numerical experiments.
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© 2001 Springer-Verlag Wien
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Nedjalkov, M., Grasser, T., Kosina, H., Selberherr, S. (2001). Boundary Condition Models for Terminal Current Fluctuations. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_34
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_34
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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