Advertisement

Boundary Condition Models for Terminal Current Fluctuations

  • M. Nedjalkov
  • T. Grasser
  • H. Kosina
  • S. Selberherr
Conference paper

Abstract

A stochastic approach to a recently proposed model of terminal current fluctuations is presented. Two kinds of boundary conditions suitable for noise simulations in semiconductor devices are proposed. The properties and the domain of application of the two models are investigated and the conclusions are drawn from numerical experiments.

Keywords

Boundary Condition Autocovariance Function Noise Simulation Boundary Condition Model Ensemble Monte Carlo 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Reference

  1. [1]
    L. Varani, T. Kuhn, L. Reggiani, and Y. Perles, “Current and Number Fluctuations in Submicron n+nn+ Structures;’ Solid-State Electron, vol. 36, no. 2, pp. 251–261, 1993.CrossRefGoogle Scholar
  2. [2]
    T. Gonzalez and D. Pardo, “Ensemble Monte Carlo with Poisson Solver for the Study of Current Fluctuations in Homogeneous GaAs Structures,” J.Appl.Phys.,vol. 73, no. 11, pp. 7453–7464, 1993.CrossRefGoogle Scholar
  3. [3]
    J. Adams, T.Tang, and L. Kay, “Monte Carlo Simulation of Noise in GaAs Semiconductor Devices,” IEEE Trans.Electron Devices, vol. 41, no. 4, pp. 575–581,1994.CrossRefGoogle Scholar
  4. [4]
    C. Korman and I. Mayergoyz, “Semiconductor Noise in the Framework of Semiclassical Transport:’ Physical Review B, vol. 54, no. 24, pp. 17620–17627, 1996.CrossRefGoogle Scholar
  5. [5]
    A. Piazza, C. Korman, and A. Jardeh, “A Physics-Based Semiconductor Noise Model Suitable for Efficient Numerical Implementation,” IEEE Trans. Computer-Aided Design, vol. 18, no. 12, pp. 1730–1740, 1999.CrossRefGoogle Scholar
  6. [6]
    H. Kosina, M. Nedjalkov, and S. Selberherr, “A Monte Carlo Method for Small Signal Analysis of the Boltzmann Equation,” JAppl.Phys., vol. 87, no. 9, pp. 4308–4314, 2000.Google Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • M. Nedjalkov
    • 1
  • T. Grasser
    • 1
  • H. Kosina
    • 1
  • S. Selberherr
    • 1
  1. 1.Institute for MicroelectronicsTU ViennaGusshausstrasse 27-29ViennaAustria

Personalised recommendations