Skip to main content

Boundary Condition Models for Terminal Current Fluctuations

  • Conference paper
Simulation of Semiconductor Processes and Devices 2001

Abstract

A stochastic approach to a recently proposed model of terminal current fluctuations is presented. Two kinds of boundary conditions suitable for noise simulations in semiconductor devices are proposed. The properties and the domain of application of the two models are investigated and the conclusions are drawn from numerical experiments.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 169.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 219.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 219.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

Reference

  1. L. Varani, T. Kuhn, L. Reggiani, and Y. Perles, “Current and Number Fluctuations in Submicron n+nn+ Structures;’ Solid-State Electron, vol. 36, no. 2, pp. 251–261, 1993.

    Article  Google Scholar 

  2. T. Gonzalez and D. Pardo, “Ensemble Monte Carlo with Poisson Solver for the Study of Current Fluctuations in Homogeneous GaAs Structures,” J.Appl.Phys.,vol. 73, no. 11, pp. 7453–7464, 1993.

    Article  Google Scholar 

  3. J. Adams, T.Tang, and L. Kay, “Monte Carlo Simulation of Noise in GaAs Semiconductor Devices,” IEEE Trans.Electron Devices, vol. 41, no. 4, pp. 575–581,1994.

    Article  Google Scholar 

  4. C. Korman and I. Mayergoyz, “Semiconductor Noise in the Framework of Semiclassical Transport:’ Physical Review B, vol. 54, no. 24, pp. 17620–17627, 1996.

    Article  Google Scholar 

  5. A. Piazza, C. Korman, and A. Jardeh, “A Physics-Based Semiconductor Noise Model Suitable for Efficient Numerical Implementation,” IEEE Trans. Computer-Aided Design, vol. 18, no. 12, pp. 1730–1740, 1999.

    Article  Google Scholar 

  6. H. Kosina, M. Nedjalkov, and S. Selberherr, “A Monte Carlo Method for Small Signal Analysis of the Boltzmann Equation,” JAppl.Phys., vol. 87, no. 9, pp. 4308–4314, 2000.

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 2001 Springer-Verlag Wien

About this paper

Cite this paper

Nedjalkov, M., Grasser, T., Kosina, H., Selberherr, S. (2001). Boundary Condition Models for Terminal Current Fluctuations. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_34

Download citation

  • DOI: https://doi.org/10.1007/978-3-7091-6244-6_34

  • Publisher Name: Springer, Vienna

  • Print ISBN: 978-3-7091-7278-0

  • Online ISBN: 978-3-7091-6244-6

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics