Analysis of Gate Tunneling Current in MOS Structures using Quantum Mechanical Simulation

  • Matsuto Ogawa
  • Tanroku Miyoshi
Conference paper


We report studies of quantum transport in n+Si-Si02-p Si MetalOxide-Semiconductor (MOS) structures based upon a non-equilibrium tight-binding Green’s function method. As a result, the quasi-bound states at the Si02-p Si interface are found to be lower than those calculated by the conventional Shrödinger-Poisson analysis, since the wavefunctions in this region are coupled with the Bloch functions in the electrodes. It is also found that the leakage current through the oxide consists of not only the intraband tunneling but also the interband tunneling current.


Tunneling Current Open Boundary Condition Quantum Transport Bloch Function Gate Tunneling 
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Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Matsuto Ogawa
    • 1
  • Tanroku Miyoshi
    • 1
  1. 1.Department of Electrical and Electronics EngineeringKobe University RokkodaiKobeJAPAN

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