Abstract
We report studies of quantum transport in n+Si-Si02-p Si MetalOxide-Semiconductor (MOS) structures based upon a non-equilibrium tight-binding Green’s function method. As a result, the quasi-bound states at the Si02-p Si interface are found to be lower than those calculated by the conventional Shrödinger-Poisson analysis, since the wavefunctions in this region are coupled with the Bloch functions in the electrodes. It is also found that the leakage current through the oxide consists of not only the intraband tunneling but also the interband tunneling current.
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© 2001 Springer-Verlag Wien
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Ogawa, M., Miyoshi, T. (2001). Analysis of Gate Tunneling Current in MOS Structures using Quantum Mechanical Simulation. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_32
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_32
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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