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Analysis of Gate Tunneling Current in MOS Structures using Quantum Mechanical Simulation

  • Matsuto Ogawa
  • Tanroku Miyoshi
Conference paper

Abstract

We report studies of quantum transport in n+Si-Si02-p Si MetalOxide-Semiconductor (MOS) structures based upon a non-equilibrium tight-binding Green’s function method. As a result, the quasi-bound states at the Si02-p Si interface are found to be lower than those calculated by the conventional Shrödinger-Poisson analysis, since the wavefunctions in this region are coupled with the Bloch functions in the electrodes. It is also found that the leakage current through the oxide consists of not only the intraband tunneling but also the interband tunneling current.

Keywords

Tunneling Current Open Boundary Condition Quantum Transport Bloch Function Gate Tunneling 
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References

  1. [1]
    C-H Choi, Y.W. Wu, J-S. Goo, Z. Yu and R.W. Dutton, IEEE Trans. on Electron Devices, 2000; 47: 1843–1850.CrossRefGoogle Scholar
  2. [2]
    M.G. Ancona, Z. Yu, R.W. Dutton, P.J.V. Voorde, M. Cao, and D. Vook, “Density-Gradient Analysis of MOS Tunneling, ibid: 2310–2319.Google Scholar
  3. [3]
    R. Lake, G. Klimeck, R.C. Bowen, and D. Jovanovic, “Single and multiband modeling of quantum electron transport through layered semiconductor devices,” 1997; 81: 7845–7869.Google Scholar
  4. [4]
    M. Ogawa, T. Sugano, R. Tominaga, and T. Miyoshi, “Simulation of Multi-Band Quantum Transport Reflecting Realistic Band Structure,” IEICE Trans. on Electron Devices, 2000; E83-a: 1235–1241.Google Scholar
  5. [5]
    H.S. Momose, M. Ono, T. Yoshitomi, T. Ohguro, S. Nakamura, M. Saito, H. Iwai, “1.5 nm direct-tunneling gate oxide Si MOSFET’s,” IEEE Trans. on Electron Devices 1996; 43: 1233–1242.CrossRefGoogle Scholar

Copyright information

© Springer-Verlag Wien 2001

Authors and Affiliations

  • Matsuto Ogawa
    • 1
  • Tanroku Miyoshi
    • 1
  1. 1.Department of Electrical and Electronics EngineeringKobe University RokkodaiKobeJAPAN

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