Abstract
An accurate and efficient 2D drift-diffusion model for thermal noise simulation based on full—band Monte—Carlo (MC) generated local noise sources is presented. Good agreement of the new model and MC device simulations is found for NMOSFETs, whereas previously developed DD based noise models fail. Verification with experiment is shown for a SiGe HBT.
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© 2001 Springer-Verlag Wien
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Deckert, S., Jungemann, C., NeinhÜs, B., Meinerzhagen, B. (2001). 2d Hierarchical Radio-Frequency Noise Modeling Based on a Langevin-Type Drift-Diffusion Model and Full-Band Monte-Carlo Generated Local Noise Sources. In: Tsoukalas, D., Tsamis, C. (eds) Simulation of Semiconductor Processes and Devices 2001. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6244-6_30
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DOI: https://doi.org/10.1007/978-3-7091-6244-6_30
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7278-0
Online ISBN: 978-3-7091-6244-6
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