Abstract
This paper presents accurate small-signal modeling of RF CMOS, valid from DC to GHz ranges, using device simulation and analytical modeling. Distributed NQS effects in terms of circuit parameters are discussed and an estimation of the limit up to which quasi-static MOS-FET models are reasonable is presented. The impact of the substrate network through gmb multiplication on terminal ac characteristics is also discussed.
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References
Y. Tsividis, Operation and modeling of the mos transistor, McGraw-Hill, second edition, 1999.
M. Je, H. Shin, SISPAD, 2003. SISPAD 2003, pp.247–250, September 2003.
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© 2004 Springer-Verlag Wien
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Jang, J., Dutton, R.W. (2004). Small-Signal Modeling of RF CMOS. In: Wachutka, G., Schrag, G. (eds) Simulation of Semiconductor Processes and Devices 2004. Springer, Vienna. https://doi.org/10.1007/978-3-7091-0624-2_88
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DOI: https://doi.org/10.1007/978-3-7091-0624-2_88
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7212-4
Online ISBN: 978-3-7091-0624-2
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